IP Library Assignment 036206/0031
Patent Assignment
Reel/Frame 036206/0031

Corporate Separation

Recorded: 2015-07-29 Pages: 9
Assignor
HITACHI METALS, LTD.
Executed: 2015-06-08
Assignee
SCIOCS COMPANY LIMITED
880 ISAGOZAWA-CHO, HITACHI-SHI, IBARAKI-KEN, 319-1418, JAPAN
Covered Properties (20)
Process for Producing Gallium Nitride Crystal Substrate, and Gallium Nitride Crystal Substrate
Patent: 6,824,610 →
Application: 10/106,693 →
Publication: US 2002/0175340
Iii-V Group Nitride System Semiconductor Substrate
Patent: 7,057,204 →
Application: 10/752,092 →
Publication: US 2005/0093003
Si-Doped Gaas Single Crystal Substrate
Patent: 7,214,269 →
Application: 10/964,819 →
Publication: US 2006/0081306
Vapor Phase Growth Apparatus
Patent: 7,494,562 →
Application: 11/070,162 →
Publication: US 2006/0124062
Grinding Abrasive Grains, Abrasive, Abrasive Solution, Abrasive Solution Preparation Method, Grinding Method, and Semiconductor Device Fabrication Method
Patent: 7,267,604 →
Application: 11/071,589 →
Publication: US 2005/0205836
Method of Making Nitride-Based Compound Semiconductor Crystal and Substrate
Patent: 7,348,278 →
Application: 11/179,781 →
Publication: US 2006/0228819
Group Iii-V Nitride-Based Semiconductor Substrate and Method of Making Same
Patent: 7,271,404 →
Application: 11/312,634 →
Publication: US 2007/0051969
Light Emitting Diode and Method for Fabricating Same
Patent: 7,683,378 →
Application: 11/359,528 →
Publication: US 2006/0192211
Iii Group Nitride Semiconductor Substrate, Substrate for Group Iii Nitride Semiconductor Device, and Fabrication Methods Thereof
Patent: 7,674,699 →
Application: 11/431,106 →
Publication: US 2006/0270200
Semiconductor Light-Emitting Device
Patent: 7,569,866 →
Application: 11/497,379 →
Publication: US 2007/0075321
Nitride-Based Semiconductor Substrate, Method of Making the Same and Epitaxial Substrate for Nitride-Based Semiconductor Light Emitting Device
Patent: 7,728,323 →
Application: 11/538,638 →
Publication: US 2007/0246733
Nitride Semiconductor Free-Standing Substrate
Patent: 7,649,194 →
Application: 11/541,790 →
Publication: US 2007/0290228
Light Emitting Diode
Patent: 7,652,281 →
Application: 11/848,709 →
Publication: US 2008/0083919
Field-Effect Transistor and Method of Making Same
Patent: 7,786,509 →
Application: 11/902,964 →
Publication: US 2009/0001423
Vapor Phase Growth Apparatus
Patent: 7,662,733 →
Application: 12/318,104 →
Publication: US 2009/0117721
Group Iii-V Nitride-Based Semiconductor Substrate, Group Iii-V Nitride-Based Device and Method of Fabricating the Same
Patent: 7,981,713 →
Application: 12/332,876 →
Publication: US 2009/0098677
Group Iii Nitride Semiconductor Substrate Production Method, and Group Iii Nitride Semiconductor Substrate
Patent: 8,624,356 →
Application: 12/413,992 →
Publication: US 2010/0133657
Group Iii Nitride Semiconductor Substrate, Substrate for Group Iii Nitride Semiconductor Device, and Methods of Making Same
Patent: 8,207,054 →
Application: 12/512,549 →
Publication: US 2009/0289330
Epitaxial Wafer, Light-Emitting Element, Method of Fabricating Epitaxial Wafer and Method of Fabricating Light-Emitting Element
Patent: 8,212,268 →
Application: 12/692,754 →
Publication: US 2011/0057214
Nitride Semiconductor Epitaxial Wafer and Nitride Semiconductor Device
Patent: 9,293,539 →
Application: 14/582,728 →
Publication: US 2015/0194493
Related Assignments (5)
Other recorded transfers of the patents in this record — the chain of ownership.
Merger Dec 2, 2013
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 031698/0878 →
Merger Jan 29, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 032134/0723 →
Merger Dec 23, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034578/0236 →
Assignment of Assignor's Interest Feb 29, 2016
From: NEC CORPORATION
To: SCIOCS COMPANY LIMITED
Reel/Frame 037852/0796 →
Assignment of Assignor's Interest Mar 2, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 037869/0437 →