IP Library › Assignment 034578/0236
Patent Assignment
Reel/Frame 034578/0236

Merger

Recorded: 2014-12-23 Pages: 30
Assignor
HITACHI CABLE, LTD.
Executed: 2013-07-12
Assignee
HITACHI METALS, LTD.
2-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Properties (5)
Process for Producing Gallium Nitride Crystal Substrate, and Gallium Nitride Crystal Substrate
Patent: 6,824,610 →
Application: 10/106,693 →
Publication: US 2002/0175340
Iii-V Group Nitride System Semiconductor Substrate
Patent: 7,057,204 →
Application: 10/752,092 →
Publication: US 2005/0093003
Vapor Phase Growth Apparatus
Patent: 7,494,562 →
Application: 11/070,162 →
Publication: US 2006/0124062
Vapor Phase Growth Apparatus
Patent: 7,662,733 →
Application: 12/318,104 →
Publication: US 2009/0117721
Manufacturing Method of Semiconductor Photonic Device Substrate
Patent: 8,367,431 →
Application: 12/766,684 →
Publication: US 2011/0003413
Related Assignments (5)
Other recorded transfers of the patents in this record — the chain of ownership.
Corporate Separation Jul 29, 2015
From: HITACHI METALS, LTD.
To: SCIOCS COMPANY LIMITED
Reel/Frame 036206/0031 →
Assignment of Assignor's Interest Aug 7, 2015
From: HITACHI METALS, LTD.
To: SCIOCS COMPANY, LIMITED
Reel/Frame 036280/0827 →
Assignment of Assignor's Interest Jan 11, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 037455/0891 →
Assignment of Assignor's Interest Feb 29, 2016
From: NEC CORPORATION
To: SCIOCS COMPANY LIMITED
Reel/Frame 037852/0796 →
Assignment of Assignor's Interest Mar 2, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 037869/0437 →