Vapor phase growth apparatus
View Patent ↗A method of cooling a complex electronic system includes preventing system air from passing through a front side and a rear side of a server system main board, organizing a plurality of electronic segments of the server system main board, providing cool air horizontally to the server system main board through a cool air intake provided at a position located underneath the front side and at a bottom side of the server system main board, using the cool air intake to provide the cool air to a plurality of cooling segments that redirect the cool air vertically at a 90° angle, and using a hot air exhaust after the hot air reaches the top side of the server system main board to redirect the hot air horizontally at a 90° angle and exhaust the hot air.
1. A vapor phase growth process comprising:
heating semiconductor wafers, the semiconductor wafers being heated by a heater mounted in a vapor phase growth apparatus; and
thermally decomposing a source gas on the semiconductor wafers such that crystal growth occurs on the semiconductor wafers, the semiconductor wafers being held towards a bottom area of the vapor phase growth apparatus by a plurality of rotation susceptors, the plurality of rotation susceptors having bearing holding portions aligned with an outermost end of a projected portion of pinion gears that mesh with a common gear, the common gear being located at a periphery of a disk-like revolution susceptor, the pinion gears meshing with the common gear at a position directly above a bearing, the plurality of rotation susceptors being rotatably mounted through the bearing in an annular disposition on the periphery of the disk-like revolution susceptor,
wherein an outermost end of a projected portion of said pinion gears located at an upper portion of a periphery of the plurality of rotation susceptors is substantially aligned with an outermost end of a projected portion of said common gear located at the periphery of the revolution susceptor.
2. The vapor phase growth process according to claim 1 , wherein the source gas is introduced through a source gas inlet of the vapor phase growth apparatus, the source gas inlet leading the source gas to a bottom area of the vapor phase growth apparatus and toward a center area of the disk-like revolution susceptor.
3. The vapor phase growth process according to claim 1 , wherein the source gas is discharged laterally and radially from a center area of the disk-line revolution susceptor and through a plurality of gas exhausts located on sidewalls of the vapor phase growth apparatus.