Merger

Recorded: 2013-12-02 Pages: 30

Assignor

HITACHI CABLE, LTD.

Executed: 2013-07-01

Assignee

HITACHI METALS, LTD.

2-1, SHIBAURA 1-CHOME MINATO-KU, TOKYO, JAPAN

Covered Property (1)

Group Iii Nitride Semiconductor Substrate Production Method, and Group Iii Nitride Semiconductor Substrate

Patent: 8,624,356 →

Application: 12/413,992 →

Publication: US 2010/0133657

Related Assignments (2)

Other recorded transfers of the patent in this record — the chain of ownership.