High temperature-resistant niobium wire

1. Method for the production of high temperature-resistant niobium wire enriched with phosphorous, said wire having a phosphorus content of approximately 50 μg/g to approximately 2000 μg/g, said method comprising the following steps:

a) obtaining a material consisting essentially only of niobium and phosphorus by:

i) doping niobium with phosphorous by electron-beam melting, arc melting, or sintering with the addition of phosphorous or phosphorous-containing prealloys, or

ii) sintering niobium powder already doped with phosphorous, and

b) drawing a wire from the material obtained.

2. Method according to claim 1 , wherein the wire has a diameter of 0.2 to 0.4 mm.

3. Method according to claim 1 , wherein the drawing of the wire is done at room temperature.

4. Method according to claim 3 , wherein the phosphorus content in said wire ranges from approximately 100 μg/g to approximately 2000 μg/g.

5. Method according to claim 3 , wherein the phosphorus content in said wire ranges from approximately 350 μg/g to approximately 2000 μg/g.

6. A method of preparing a niobium, niobium oxide or tantalum capacitor, said method comprising the following steps:

a) producing a high temperature-resistant niobium wire enriched with phosphorous according to the method of claim 1 ; and

b) incorporating said wire into a niobium, niobium oxide or tantalum capacitor.