Decoder for memory device
View Patent ↗A decoder for a memory device includes driving devices each applying a respective line voltage to a respective line of the memory device when turned on. The decoder also includes a control device coupled to the plurality of driving devices at a common node for generating a voltage that controls the driving devices to turn on or off. Also, a capacitor coupled to the common node increases the voltage at the common node from an initial boost voltage to a final boost voltage. Thus, a line of a memory device is driven to a boost voltage with minimized area and wiring complexity.
1. A decoder for a memory device, the decoder comprising:
a plurality of driving devices each applying a respective line voltage to a respective line of the memory device when turned on;
a control device coupled to the plurality of driving devices at a common node for generating a voltage at the common node for controlling the driving devices to turn on or off; and
a capacitor, coupled to the common node, wherein a charge stored in the capacitor increases the voltage at the common node from an initial boost voltage to a final boost voltage;
and wherein the control device has substantially same constant control voltages applied thereon during generation of both the initial boost voltage and the final boost voltage at the common node.
2. The decoder of claim 1 , wherein the capacitor is a MOSFET (metal oxide semiconductor field effect transistor) having a gate coupled to the common node and having a drain and a source that are coupled together at a capacitance node.
3. The decoder of claim 2 , wherein a low voltage is applied on the capacitance node when the initial boost voltage is generated at the common node.
4. The decoder of claim 3 , wherein each of the driving devices is a MOSFET having a gate coupled to the common node and having a drain with the respective line voltage applied thereon and having a source coupled to the respective line.
5. The decoder of claim 4 , wherein the respective line voltage for each of the driving devices is the low voltage when the initial boost voltage is generated at the common node.
6. The decoder of claim 5 , wherein one of the respective line voltages is an original boost voltage that is also applied on the capacitance node for generating the final boost voltage at the common node.
7. The decoder of claim 6 , wherein the control device is a MOSFET having a source coupled to the common node and having a gate and a drain with the original boost voltage applied thereon during generation of the initial boost voltage and the final boost voltage on the common node.
8. The decoder of claim 1 , further comprising:
a plurality of pull-down devices, each applying a low voltage to a respective line of the memory device when the driving devices are turned off.
9. The decoder of claim 8 , wherein each pull-down device is a MOSFET having a source with the low voltage applied thereon, a drain coupled to a respective line, and a gate coupled to a common control terminal.
10. The decoder of claim 9 , wherein the gates of all the MOSFETs comprising the pull-down devices are coupled to the common control terminal.
11. The decoder of claim 10 , wherein an original boost voltage is applied on the common control terminal for turning on all the MOSFETs comprising the pull-down devices such that the low voltage is applied on each respective line.
12. The decoder of claim 1 , wherein the memory device is a flash memory device, and wherein each respective line is a respective word line of the flash memory device.
13. A method for driving lines in a memory device, comprising:
turning on a plurality of driving devices to apply a respective line voltage to each of a plurality of lines of the memory device;
controlling the driving devices to turn on or off by adjusting a voltage generated at a common node coupling the plurality of driving devices;
storing charge in a capacitor coupled to the common node for increasing the voltage at the common node from an initial boost voltage to a final boost voltage; and
applying substantially same constant control voltages on the control device during generation of both the initial boost voltage and the final boost voltage at the common node.
14. The method of claim 13 , wherein the capacitor is a MOSFET (metal oxide semiconductor field effect transistor) having a gate coupled to the common node and having a drain and a source that are coupled together at a capacitance node.
15. The method of claim 14 , further comprising: applying a low voltage on the capacitance node when the initial boost voltage is generated at the common node.
16. The method of claim 15 , wherein each of the driving devices is a MOSFET having a gate coupled to the common node and having a drain having the respective line voltage applied thereon and having a source coupled to the respective line.
17. The method of claim 16 , wherein the respective line voltage for each of the driving devices is the low voltage when the initial boost voltage is generated at the common node.
18. The method of claim 17 , wherein one of the respective line voltages is an original boost voltage that is also applied on the capacitance node for generating the final boost voltage at the common node.