Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof
View Patent ↗A method for forming a semiconductor device including forming a semiconductor substrate; forming a gate electrode over the semiconductor substrate having a first side and a second side, and forming a gate dielectric under the gate electrode. The gate dielectric has a first area under the gate electrode and adjacent the first side of the gate electrode, a second area under the gate electrode and adjacent the second side of the gate electrode, and a third area under the gate electrode that is between the first area and the second area, wherein the first area is thinner than the second area, and the third area is thinner than the first area and is thinner than the second area.
1. A method for forming a semiconductor device, the method comprising:
providing a semiconductor substrate;
forming a gate electrode over the semiconductor substrate having a first side and a second side; and
forming a gate dielectric under the gate electrode, wherein the gate dielectric has a first area under the gate electrode and adjacent the first side of the gate electrode; a second area under the gate electrode and adjacent the second side of the gate electrode; and a third area under the gate electrode that is between the first area and the second area; wherein the first area is thinner than the second area, and the third area is thinner than the first area and is thinner than the second area.
2. The method of claim 1 wherein the forming the gate dielectric under the gate electrode further comprises:
forming a first dielectric layer;
implanting an oxidation enhancing species into the semiconductor substrate to form oxidation enhancement regions; and
oxidizing the oxidation enhancement regions.
3. The method of claim 2 , wherein the implanting the oxidation enhancing species further comprises implanting the oxidation enhancing species into the gate electrode to form oxidation enhancement regions.
4. The method of claim 2 , wherein the implanting is performed at a tilt.
5. The method of claim 1 wherein the forming the gate dielectric under the gate electrode further comprises:
forming a first dielectric layer;
implanting an oxidation reduction species into the semiconductor substrate to form oxidation reducing regions; and
oxidizing the semiconductor substrate.
6. The method of claim 5 , wherein the implanting the oxidation enhancing species further comprises implanting the oxidation reduction species into the gate electrode to form oxidation reducing regions.
7. The method of claim 5 , wherein the implanting is performed at a tilt.
8. The method of claim 1 wherein the forming the gate dielectric under the gate electrode further comprises:
forming a first dielectric layer;
implanting an oxidation enhancing species into the semiconductor substrate to form oxidation enhancement regions;
implanting an oxidation reduction species into the semiconductor substrate to form oxidation reducing regions; and
oxidizing the semiconductor substrate, wherein oxidizing comprises forming a dielectric in the oxidation enhancement regions.
9. The method of claim 1 , further comprising:
forming a source extension region and a drain extension region after the forming the gate dielectric, wherein the source extension region is deeper than the drain extension region.
10. The method of claim 1 , further comprising:
forming a first spacer adjacent the first side of the gate electrode and a second spacer adjacent the second side of the gate electrode after the forming the gate dielectric.
11. A method for forming a semiconductor device, the method comprising:
providing a semiconductor substrate;
forming a dielectric layer over the semiconductor substrate;
forming a gate electrode over the dielectric layer, wherein the gate electrode has a first side and a second side opposite the first side;
implanting an oxidation enhancing species into the first side of the gate electrode and a first area of the semiconductor substrate, wherein the first area is under the gate electrode and adjacent the first side of the gate electrode; and
converting the first area to a first dielectric and a second area of the semiconductor substrate, wherein the second area is under the gate electrode and adjacent the second side of the gate electrode, to a second dielectric, wherein the thickness of the first dielectric is greater than the thickness of the second dielectric.
12. The method of claim 11 , wherein the converting comprises annealing the semiconductor substrate.
13. The method of claim 11 , wherein the implanting comprises implanting at least a species selected from the group consisting of germanium, oxygen, fluorine, and chlorine.
14. The method of claim 11 , further comprises implanting an oxidation reduction species into the second area.
15. The method of claim 14 , wherein the implanting the oxidation reduction species comprises implanting nitrogen.
16. The method of claim 11 , further comprising:
forming a source extension region and a drain extension region after the converting, the first area and the second area, wherein the source extension region is deeper than the drain extension region.
17. The method of claim 11 , further comprising:
forming a first spacer adjacent the first side of the gate electrode and a second spacer adjacent the second side of the gate electrode after the converting.
18. The method of claim 11 , wherein the implanting is performed at a tilt.