PECVD nitride film
View Patent ↗A method for forming a semiconductor device is provided. In accordance with the method, a substrate ( 103 ) is provided, and a dielectric material ( 123 ) is formed on the substrate through plasma enhanced chemical vapor deposition (PECVD). The PECVD is conducted at a temperature of greater than 300° C., and utilizes an atmosphere comprising nitrogen, silane, ammonia, and helium.
1. A method for making a semiconductor device, comprising:
providing a substrate; and
forming a dielectric material on the substrate through plasma enhanced chemical vapor deposition (PECVD), wherein the PECVD is conducted at a temperature greater than 300° C. and utilizes an atmosphere comprising nitrogen, silane, ammonia, and helium, and wherein the dielectric material comprises silicon nitride.
2. The method of claim 1 , wherein the PECVD is conducted at a temperature of at least 400° C.
3. The method of claim 1 , wherein the PECVD is conducted at a temperature within the range of about 400° C. to about 450° C.
4. The method of claim 1 , wherein the atmosphere is achieved with a source of helium having a flow rate of helium associated therewith, and a source of silane having a flow rate of silane associated therewith, and wherein the ratio of the flow rate of helium to the flow rate of silane is at least 15.
5. The method of claim 4 , wherein the ratio of the flow rate of helium to the flow rate of silane is within the range of about 35 to about 140.
6. The method of claim 1 , further comprising the step of incorporating the dielectric material and substrate into a CMOS device.
7. The method of claim 1 , wherein the substrate comprises a first metal layer, and further comprising the step of disposing a second metal layer such that the dielectric material is disposed between the first and second metal layer.
8. The method of claim 1 , wherein the PECVD is conducted within a chamber having first and second electrodes, wherein the substrate is disposed between the first and second electrodes, and wherein the spacing between the substrate and the first electrode is within the range of about 180 mils to 340 mils.
9. The method of claim 8 , wherein the spacing between the substrate and the first electrode is within the range of about 220 mils to 300 mils.
10. The method of claim 8 , wherein the spacing between the substrate and the first electrode is within the range of about 240 mils to 280 mils.
11. The method of claim 1 , wherein the PECVD is conducted within a chamber having first and second electrodes, wherein the substrate is disposed between the first and second electrodes, wherein the first electrode is an RE electrode, and wherein the power supplied to the first electrode is within the range of about 100 to about 300 mWatts.
12. The method of claim 11 , wherein the power supplied to the first electrode is within the range of about 150 to about 250 mWatts.
13. The method of claim 11 , wherein the power supplied to the first electrode is within the range of about 175 to about 225 mWatts.
14. The method of claim 1 , wherein the PECVD is conducted within a chamber having a pressure maintained within the range of about 0.5 to about 3.5 torr.
15. The method of claim 1 , wherein the PECVD is conducted within a chamber having a pressure maintained within the range of about 2 to about 3 torr.
16. The method of claim 1 , wherein the dielectric material is an interlayer dielectric (ILD).
17. The method of claim 16 , wherein the ILD has a compressive stress of at least about 1 GPa.
18. The method of claim 16 , wherein the ILD has a compressive stress of at least about 1.7 GPa.
19. The method of claim 16 , wherein the ILD has a compressive stress of at least about 2.0 GPa.
20. The method of claim 1 , wherein the atmosphere is achieved using:
a flow rate of silane within the range of about 5 to about 55 sccm;
a flow rate of nitrogen within the range of about 200 to about 2600 sccm;
a flow rate of helium within the range of about 2000 to about 4000 sccm; and
a flow rate of ammonia within the range of about 60 to about 140 sccm.
21. The method of claim 1 , wherein the atmosphere is achieved using:
a flow rate of silane within the range of about 10 to about 40 sccm;
a flow rate of nitrogen within the range of about 800 to about 2000 sccm;
a flow rate of helium within the range of about 2500 to about 3500 sccm; and
a flow rate of ammonia within the range of about 80 to about 120 sccm.
22. The method of claim 1 , wherein the atmosphere is achieved using:
a flow rate of silane within the range of about 15 to about 35 sccm;
a flow rate of nitrogen within the range of about 1100 to about 1700 sccm;
a flow rate of helium within the range of about 2700 to about 3300 sccm; and
a flow rate of ammonia within the range of about 90 to about 110 sccm.
23. The method of claim 1 , wherein the atmosphere is achieved using:
a flow rate of silane within the range of about 20 to about 30 sccm;
a flow rate of nitrogen within the range of about 1200 to about 1600 sccm;
a flow rate of helium within the range of about 2800 to about 3200 sccm; and
a flow rate of ammonia within the range of about 95 to about 105 sccm.