Memory having cap structure for magnetoresistive junction and method for structuring the same
View Patent ↗A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed over an upper magnetic layer of a magnetoresistive junction (MTJ/MCJ) layered structure and a hardmask layer formed over said etch stop layer, wherein said etch stop layer is selected from a material such that an etch chemistry used for removing said hardmask layer has selectivity against etching said etch stop layer material. In a method of opening the hardmask layer, an etch process to remove exposed portions of the hardmask layer is implemented, where the etch process terminates on the etch stop layer.
1. A random access memory comprising:
a magnetoresistive junction having an upper magnetic layer;
a cap structure comprising an etch stop layer formed over the upper magnetic layer, and a hardmask layer formed over the etch stop layer, wherein the etch stop layer material comprises ruthenium (Ru) which is directly in contact with said upper magnetic layer.
2. The memory of claim 1 , wherein the etch stop layer material is removable using an oxygen based etch chemistry.
3. The memory of claim 1 , wherein the etch stop layer material is selected to be corrosion resistant with respect to halogen based etch chemistries, and the etch stop layer is further selected to be resistant to post-etch, aqueous cleaning processes.
4. The memory of claim 1 , wherein the etch stop layer material is removable using reactive ion etching.
5. The memory of claim 1 , wherein the hardmask layer material is selected from one or more of the group consisting of tantalum (Ta), tantalum nitride (TaN), titanium nitride (TiN), tungsten nitride (WN), silicon dioxide (SiO 2 ) and silicon nitride (SiN).
6. A magnetoresistive random access memory device comprising:
a magnetoresistive junction (MTJ/MCJ) layered structure having an upper magnetic layer; and
a cap structure comprising an etch stop layer formed over the upper magnetic layer, a cap layer formed over the etch stop layer, and a hardmask layer formed over the cap layer, wherein the etch stop layer comprises ruthenium (Ru) which is directly in contact with said upper magnetic layer.
7. The memory of claim 6 , wherein the etch stop layer material is removable using an oxygen based etch chemistry.
8. The memory of claim 6 , wherein the etch stop layer material is selected to be corrosion resistant with respect to halogen based etch chemistries, and the etch stop layer is further selected to be resistant to post-etch, aqueous cleaning processes.
9. The cap structure of claim 6 , wherein the etch stop layer material is removable using reactive ion etching.
10. The memory of claim 6 , wherein the hardmask layer material is selected from one or more of the group consisting of tantalum (Ta), tantalum nitride (TaN), titanium nitride (TiN), tungsten nitride (WN), silicon dioxide (SiO 2 ) and silicon nitride (SiN).
11. The memory of claim 6 , wherein the cap layer material is selected from one or more of the group consisting of tantalum (Ta), tantalum nitride (TaN) and titanium nitride (TiN).
12. A random access memory comprising:
a magnetoresistive junction having an upper magnetic layer;
means for providing a cap structure comprising an etch stop layer formed over the upper magnetic layer, and a hardmask layer formed over the etch stop layer, the hardmask layer is selected from one or more of the group consisting of tantalum (Ta), tantalum nitride (TaN), titanium nitride (TiN), tungsten nitride (WN), silicon dioxide (SiO 2 ), and silicon nitride (SiN), and wherein the etch stop layer material comprises ruthenium (Ru) which is directly in contact with said upper magnetic layer.