Method for manufacturing semiconductor device
High quality dielectric layers may be achieved without introducing excessive impurities when a semiconductor device is manufactured by a method that includes forming a lower wire layer on a structure above a semiconductor substrate, forming a silicon rich oxide layer having a refractive index of 0.45-1.55 on the lower wire layer and the structure, implanting carbon and oxygen (e.g., CO 2 ) into the silicon rich oxide (SRO) layer, and forming an organosilicate glass layer by heat-treating the implanted SRO layer.
1. A method for manufacturing a semiconductor device, comprising:
forming a lower wire layer on a structure above a semiconductor substrate;
forming a silicon rich oxide layer having a refractive index of 0.45-1.55 on the lower wire layer and the structure;
implanting carbon and oxygen from a carbon and oxygen source material that does not contain hydrogen into the silicon rich oxide layer; and
heat-treating the implanted silicon rich oxide layer to form an organosilicate glass layer.
2. The method of claim 1 , wherein the carbon and oxygen source material consists essentially of CO 2 .
3. The method of claim 1 , wherein forming the silicon rich oxide layer comprises depositing the silicon rich oxide layer by plasma enhanced chemical vapor deposition.
4. The method of claim 3 , wherein the heat-treating is sequentially performed in atmospheres comprising O 2 gas, N 2 gas, and an inert or noble gas.
5. The method of claim 4 , further comprising, before forming the silicon rich oxide layer, forming a barrier layer on the lower wire layer and the structure.
6. The method of claim 5 , wherein the barrier layer comprises SiC.
7. The method of claim 1 , wherein the heat-treating is performed at a temperature of 400-600° C.
8. The method of claim 7 , wherein the heat-treating is sequentially performed in atmospheres comprising O 2 gas, N 2 gas, and an inert or noble gas.
9. The method of claim 8 , further comprising, before forming the silicon rich oxide layer, forming a barrier layer on the lower wire layer and the structure.
10. The method of claim 9 , wherein the barrier layer comprises SiC.
11. The method of claim 1 , further comprising, before forming the silicon rich oxide layer, forming a barrier layer comprising SiC on the lower wire layer and the structure, wherein:
forming the silicon rich oxide layer comprises depositing the silicon rich oxide layer by plasma enhanced chemical vapor deposition; and
the heat-treating comprises heating a chamber containing the substrate to a temperature of 400-600° C. sequentially in atmospheres comprising O 2 gas, N 2 gas, and an inert or noble gas.
12. A method for manufacturing a semiconductor device, comprising:
forming a lower wire layer on a structure above a semiconductor substrate;
forming a silicon rich oxide layer having a refractive index of 0.45-1.55 on the lower wire layer and the structure;
implanting carbon and oxygen from a carbon and oxygen source material into the silicon rich oxide layer; and
heat-treating the implanted silicon rich oxide layer sequentially in atmospheres comprising O 2 gas, N 2 gas, and an inert or noble gas to form an organosilicate glass layer.
13. The method of claim 12 , wherein the carbon and oxygen source material does not contain hydrogen.
14. The method of claim 12 , further comprising, before forming the silicon rich oxide layer, forming a barrier layer on the lower wire layer and the structure.
15. The method of claim 14 , wherein the barrier layer comprises SiC.
16. A method for manufacturing a semiconductor device, comprising:
forming a lower wire layer on a structure above a semiconductor substrate;
forming a silicon rich oxide layer having a refractive index of 0.45-1.55 on the lower wire layer and the structure;
implanting CO 2 into the silicon rich oxide layer; and
heat-treating the implanted silicon rich oxide layer to form an organosilicate glass layer.
17. The method of claim 16 , wherein the heat-treating is performed at a temperature of 400-600° C.
18. The method of claim 16 , wherein the heat-treating is sequentially performed in atmospheres of O 2 gas, N 2 gas, and an inert or noble gas.
19. The method of claim 16 , further comprising, before forming the silicon rich oxide layer, forming a barrier layer on the lower wire layer and the structure.
20. A method for manufacturing a semiconductor device, comprising:
forming a silicon rich oxide layer having a refractive index of 0.45-1.55 on a lower wire layer and a structure above a semiconductor substrate;
implanting carbon and oxygen into the silicon rich oxide layer from a source material that does not contain hydrogen; and
heat-treating the implanted silicon rich oxide layer to form an organosilicate glass layer.