Precursors for CVD silicon carbo-nitride and silicon nitride films

1. A process for forming silicon nitride or silicon carbo-nitride films on a substrate through chemical vapor deposition of a silicon nitride or silicon carbo-nitride film forming precursor which comprises:

using a precursor selected from the group consisting of an aminosilane represented by the formulas:

and mixtures thereof, wherein R is selected from C 1 -C 10 alkyl groups, linear, branched, or cyclic, saturated or unsaturated; aromatic, heterocyclic, amine groups, or silyl in formula C, R 1 is selected from C 3 -C 10 alkyl groups, branched, or cyclic, saturated or unsaturated;

aromatic, heterocyclic, hydrogen, silyl groups with or without substituents with R and R 1 in formula A also being combinable into a cyclic group (CH 2 ) n , wherein n is from 2-6, R and R in formula C also being combinable into a cyclic group and R 2 representing a single bond, (CH 2 ) m chain, a ring, SiR 2 , or SiH 2 and wherein R and R 1 in Formula A are each independently C 3 -C 10 branched alkyl groups.

2. The process of claim 1 wherein R and R 1 are cyclic.

3. The process of claim 1 wherein R and R 1 are combined into a ring in the form of (CH 2 ) n where n is from 4-5.

4. The process of claim 1 wherein R and R 1 are isopropyl.

5. The process of claim 1 wherein the using step further comprises a nitrogen source selected from the group consisting of ammonia, nitrogen and hydrazine.

6. The process of claim 5 wherein the temperature of the substrate during chemical vapor deposition is within the range of approximately 500 to 700° C.

7. The process of claim 6 wherein the pressure during chemical vapor deposition is in the range of approximately 20 mTorr to 20 Torr.

8. The process of claim 5 wherein the nitrogen source is ammonia or nitrogen and the nitrogen source is present in a nitrogen source:precursor range of from 0.1 to 4:1.

9. The process of claim 1 wherein the precursor aminosilane is represented by the formula A and within that class, is selected from the aminosilanes having the formula:

and where m is 1-6.

10. The process of claim 1 wherein the precursor is represented by the formula B and within that class, the precursor is selected from the group having the formula:

11. The process of claim 10 wherein a nitrogen source selected from the group consisting of ammonia or nitrogen is included as precursor and the nitrogen source is present in a nitrogen source:precursor range of from 0.1 to 4:1.

12. The process of claim 1 wherein the precursor is represented by the formula C and within that class, the precursor is selected from the group having the formulas:

13. In a process for forming a silicon nitride or silicon carbo-nitride film wherein such film is formed by the chemical vapor deposition of a silane precursor, the improvement which comprises:

employing an aminosilane as the silane precursor which is represented by the formula:

wherein R and R 1 are each independently selected from a C 3 -C 10 alkyl groups branched, cyclic, saturated, or unsaturated; aromatic group; heterocyclic; or silyl groups with R and R 1 also being combinable into a cyclic group (CH 2 ) n , wherein n is from 2-6.

14. The process of claim 13 wherein R and R 1 are isopropyl.

15. The process of claim 14 wherein the chemical vapor deposition further comprises a nitrogen source selected from the group consisting of ammonia or nitrogen in employed in a nitrogen source:silane precursor ratio of from 0.1 to 4:1.

16. The process of claim 15 wherein the temperature of the substrate is maintained with a range of 500 to 700° C. and the pressure is from 20 mTorr to 20 Torr.

17. The process of claim 10 wherein the precursor has the formula:

18. The process of claim 10 wherein the precursor has the formula:

19. The process of claim 12 wherein the precursor has the formula:

20. The process of claim 12 wherein the precursor has the formula:

21. The process of claim 1 wherein R and R 1 are combined into a ring in the form of (CH 2 ) n where n is from 2-6.

22. A process for forming a silicon carbo-nitride film on a substrate through chemical vapor deposition comprising:

using a precursor selected from the group consisting of an aminosilane represented by the formula:

and mixtures thereof, wherein R is selected from C 1 -C 10 alkyl groups, linear, branched, or cyclic, saturated or unsaturated and aromatic or heterocyclic amine groups

wherein the precursor is selected from the group having the formula:

23. A process for forming a silicon carbo-nitride film on a substrate through chemical vapor deposition which comprises:

using a precursor selected from the group consisting of an aminosilane represented by the formulas:

and mixtures thereof, wherein R is selected from C 1 -C 10 alkyl groups, linear, branched, or cyclic, saturated or unsaturated; aromatic, heterocyclic, amine groups, or silyl in formula C, R and R in formula C also being combinable into a cyclic group and R 2 representing a single bond, (CH 2 ) m chain, a ring, SiR 2 , or SiH 2 ,

wherein the precursor is selected from the group having the formulas:

24. A process for forming silicon nitride or silicon carbo-nitride films on a substrate through chemical vapor deposition of a silicon nitride or silicon carbo-nitride film forming precursor which comprises:

using a precursor selected from the group consisting of an aminosilane represented by the formulas:

and mixtures thereof, wherein R is selected from C 1 -C 10 alkyl groups, linear, branched, or cyclic, saturated or unsaturated; aromatic, heterocyclic, amine groups, or silyl in formula C, wherein R and R in formula C also being combinable into a cyclic group and R 2 representing a single bond, (CH 2 ) m chain, a ring, SiR 2 , or SiH 2 .