Magnetic memory device structure
View Patent ↗Ferromagnetic elements for use with spin memories, logic devices and processing circuits include a geometry incorporating an asymmetry about one axis and in some instances one or more curved sections. Magnetic memory elements can be set out in an array such that convex and concave portions are also optimally arranged about magnetization axes.
1. A magnetic processing circuit comprising:
a magnetic element having a variable magnetization state which can be set in response to one or more input signals;
wherein the magnetic element has a shape that includes a curved portion and is asymmetric along at least a first axis.
2. The magnetic processing circuit of claim 1 , wherein said magnetic element is part of a memory cell, and said variable magnetization state corresponds to a date value stored in said memory cell.
3. The magnetic processing circuit of claim 1 , wherein said magnetic element is part of a logic gate, and said variable magnetization state corresponds to a logic function performed on said one or more input signals.
4. The magnetic processing circuit of claim 1 , wherein said shape is symmetric along a second axis which is perpendicular to said first axis.
5. The magnetic processing circuit of claim 1 wherein said shape includes both a concave portion and a convex portion.
6. The magnetic processing circuit of claim 1 wherein said magnetic element is situated over a silicon substrate.
7. The magnetic processing circuit of claim 1 , wherein said magnetic element is part of a magnetic field sensor.
8. A magnetic processing circuit comprising:
a magnetic element having a variable magnetization state which can be set in response to one or more input signals;
wherein the magnetic element has a shape that is symmetric along a first axis and asymmetric along a second axis which is perpendicular to said first axis.
9. The magnetic processing circuit of claim 8 , wherein said magnetic element is part of a memory cell, and said variable magnetization state corresponds to a date value stored in said memory cell.
10. The magnetic processing circuit of claim 8 , wherein said magnetic element is part of a logic gate, and said variable magnetization state corresponds to a logic function performed on said one or more input signals.
11. The magnetic processing circuit of claim 8 , wherein said shape includes at least one curved portion.
12. The magnetic processing circuit of claim 8 wherein said shape includes both a concave portion and a convex portion.
13. The magnetic processing circuit of claim 8 wherein said magnetic element is situated over a silicon substrate.
14. The magnetic processing circuit of claim 8 , wherein said magnetic element is part of a magnetic field sensor.
15. A magnetic memory cell comprising:
a magnetic element which stores data for the memory cell in the form of a variable magnetization state;
wherein the magnetic element has a shape that is symmetric along a first axis and asymmetric along a second axis which is perpendicular to said first axis.
16. The magnetic memory cell of claim 15 , wherein said magnetic element includes cobalt, iron, permalloy, iron-cobalt, and/or a Heusler alloy.
17. The magnetic memory cell of claim 15 , wherein said magnetic element is situated on a silicon substrate.
18. The magnetic memory cell of claim 15 , wherein said second axis is an easy magnetization axis.
19. The magnetic memory cell of claim 15 , wherein said shape includes at least one curved portion.
20. The magnetic memory cell of claim 19 , wherein said shape includes both a concave portion and a convex portion.
21. The magnetic memory cell of claim 19 , wherein said shape also includes a straight portion.
22. The magnetic memory cell of claim 19 , wherein said curved portion is aligned along said second axis.
23. The magnetic memory cell of claim 19 , wherein said magnetic element shape has a first convex portion, and further including a second magnetic element situated opposite said magnetic element, which second magnetic element has a convex shape portion which faces said first convex portion.
24. The magnetic memory cell of claim 23 , wherein said magnetic element and said second magnetic element have different coercivities.
25. An electron spin based memory cell comprising:
a ferromagnetic layer which imparts a variable impedance to a spin polarized current conducted in the electron spin based memory cell;
wherein the ferromagnetic layer has a shape that is symmetric along a first axis and asymmetric along a second axis which is perpendicular to said first axis;
wherein said spin polarized current can be read to determine a data value stored in the electron spin based memory cell.
26. The electron spin based memory cell of claim 25 , wherein said ferromagnetic layer includes cobalt, iron, permalloy, iron-cobalt, and/or a Heusler alloy.
27. The electron spin based memory cell of claim 25 , wherein said ferromagnetic layer includes a ferromagnetic metal, a semiconductor, a perovskite, and/or a semimetal.
28. The electron spin based memory cell of claim 25 , wherein said magnetic element is situated on a silicon substrate.
29. The electron spin based memory cell of claim 25 , wherein said second axis is an easy magnetization axis.
30. The electron spin based memory cell of claim 25 , wherein said shape includes at least one curved portion.
31. The magnetic memory cell of claim 30 , wherein said shape includes both a concave portion and a convex portion.
32. The magnetic memory cell of claim 30 , wherein said shape also includes a straight portion.
33. The magnetic memory cell of claim 30 , wherein said curved portion is aligned along said second axis.
34. The magnetic memory cell of claim 30 , wherein said magnetic element shape has a first convex portion, and further including a second magnetic element situated opposite said magnetic element, which second magnetic element has a convex shape portion which faces said first convex portion.
35. The magnetic memory cell of claim 34 , wherein said magnetic element and said second magnetic element have different coercivities.