Patent Assignment
Reel/Frame 026010/0871
Security Agreement
Recorded: 2011-03-24
Pages: 9
Assignor
SEAGATE TECHNOLOGY INTERNATIONAL
Executed: 2011-01-18
Assignee
THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT
GWS LOAN OPERATIONS, 720 KING STREET WEST, 2ND FLOOR, TORONTO, M5V 2T3, CANADA
Covered Properties
(34)
Magnetic Spin Trasistor Device,Logic Gate & Method of Operation
Patent:
5,629,549 →
Application:
08/425,884 →
Magnetic Spin Transistor Hybrid Circuit Element
Patent:
5,565,695 →
Application:
08/493,815 →
Magnetic Spin Injected Field Effect Transistor and Method of Operation
Patent:
5,654,566 →
Application:
08/643,804 →
Hybrid Hall Effect Device and Method of Operation
Patent:
5,652,445 →
Application:
08/643,805 →
Hybrid Hall Effect Memory Device & Method of Operation
Patent:
6,064,083 →
Application:
08/806,028 →
High Density and High Speed Magneto-Electronic Memory for Use in Computing System
Patent:
6,169,687 →
Application:
09/005,855 →
High Density and High Speed Magneto-Electronic Logic Family
Patent:
6,140,838 →
Application:
09/074,576 →
Magnetoelectonic Memory Array
Patent:
6,307,774 →
Application:
09/532,413 →
Method of operating a magnetoellectronic device
Patent:
6,342,713 →
Application:
09/532,705 →
Magnetoelectronic Memory Element with Isolation Element
Patent:
6,388,916 →
Application:
09/532,706 →
Method of Making a Magnetoelectronic Device
Patent:
6,423,553 →
Application:
09/532,707 →
High density and high speed magneto-electronic logic family
Patent:
6,288,565 →
Application:
09/631,404 →
Magnetoelectronic Memory Element with Inductively Coupled Write Wires
Stacked Hybrid Semiconductor-Magnetic Spin Based Memory
Method of Making Hybrid Semiconductor - Magnetic Spin Based Memory
Hybrid Semiconductor - Magnetic Spin Based Memory with Low Transmission Barrier
Hybrid Semiconductor - Magnetic Spin Based Memory
Hybrid Semiconductor-Magnetic Device and Method of Operation
Magnetoelectronic Memory Element with Inductively Coupled Write Wires
Magnetoelectronic Device with Variable Magnetic Write Field
Magnetic Spin Based Memory with Inductive Write Lines
Ferromagnetic Layer Compositions and Structures for Spin Polarized Devices, Including Memory Devices
Magnetic Spin Based Memory with Semiconductor Selector
Hybrid Semiconductor - Magnetic Spin Based Memory with Low Transmission Barrier
Method of Operating a Stacked Spin Based Memory
Magnetic Field Sensor Using Spin Polarized Current
Magnetoelectronic Memory Element with Inductively Coupled Write Wires
Magnetic Memory Device Structure
Digital Processing Device with Disparate Magnetoelectronic Gates
Spin Based Sensor Device
Spin Based Device with Low Transmission Barrier
Spin Based Magnetic Sensor
Spin Based Memory Coupled to Cmos Amplifier
Multi-Bit Spin Memory
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Termination and Release of Security Interest in Patent Rights
Jul 19, 2013
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT AND SECOND PRIORITY REPRESENTATIVE
To: SEAGATE TECHNOLOGY LLC; EVAULT INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY INTERNATIONAL; SEAGATE TECHNOLOGY US HOLDINGS, INC.
Reel/Frame 030833/0001 →
Termination and Release of Security Interest in Patent Rights
Jul 19, 2013
From: THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT
To: SEAGATE TECHNOLOGY INTERNATIONAL
Reel/Frame 030836/0078 →
Release of Security Interest
Jul 23, 2025
From: THE BANK OF NOVA SCOTIA
To: SEAGATE TECHNOLOGY PUBLIC LIMITED COMPANY; SEAGATE TECHNOLOGY; SEAGATE TECHNOLOGY HDD HOLDINGS; I365 INC.
Reel/Frame 072193/0001 →