Patent Assignment
Reel/Frame 017696/0925
Assignment of Assignor's Interest
Recorded: 2006-05-25
Received: 2006-05-25
Pages: 4
Assignor
JOHNSON, MARK B.
Executed: 2005-01-01
Assignee
SPINOP CORPORATION
993 HIGHLANDS CIRCLE, LOS ALTOS, CA, 94024, UNITED STATES
Covered Properties
(17)
Digital Processing Device with Disparate Magnetoelectronic Gates
Application:
11/138,989 →
Magnetic Memory Device Structure
Application:
11/133,518 →
Magnetoelectronic Memory Element with Inductively Coupled Write Wires
Application:
11/120,540 →
Magnetic Field Sensor Using Spin Polarized Current
Application:
11/091,957 →
Method of Operating a Stacked Spin Based Memory
Application:
11/086,603 →
Hybrid Semiconductor - Magnetic Spin Based Memory with Low Transmission Barrier
Application:
10/974,037 →
Magnetic Spin Based Memory with Semiconductor Selector
Application:
10/962,254 →
Magnetic Spin Based Memory with Inductive Write Lines
Application:
10/962,252 →
Ferromagnetic Layer Compositions and Structures for Spin Polarized Devices, Including Memory Devices
Application:
10/962,253 →
Magnetoelectronic Memory Element with Inductively Coupled Write Wires
Application:
10/853,791 →
Hybrid Semiconductor-Magnetic Device and Method of Operation
Application:
10/853,545 →
Magnetoelectronic Device with Variable Magnetic Write Field
Application:
10/853,792 →
Method of Making Hybrid Semiconductor - Magnetic Spin Based Memory
Application:
10/776,939 →
Hybrid Semiconductor - Magnetic Spin Based Memory with Low Transmission Barrier
Application:
10/776,978 →
Hybrid Semiconductor - Magnetic Spin Based Memory
Application:
10/776,987 →
Stacked Hybrid Semiconductor-Magnetic Spin Based Memory
Application:
10/776,144 →
Magnetoelectronic Memory Element with Inductively Coupled Write Wires
Application:
10/100,210 →