Granted Patent B2

US 7,387,946 · App. 11/146,825 · Granted Jun 17, 2008

Abstract

Claims (11)

1. A method of forming a planar, double gate transistor includes:

implanting hydrogen into a substrate of a donor wafer to form a stress layer in the substrate;

after implanting the hydrogen, forming a stack of layers on the donor wafer, the stack including a bottom gate conductor layer and a bottom gate dielectric;

bonding the donor wafer to a handle wafer;

removing a portion of the donor wafer to produce a device wafer; and

forming the transistor in the device wafer.

2. The method of claim 1 , further comprising, prior to implanting the hydrogen, forming a sacrificial oxide.

3. The method of claim 2 , further wherein the stack includes an oxide layer overlying the bottom gate conductor layer.

4. The method of claim 3 , wherein removing the donor wafer portion comprises cleaving the donor wafer substrate along a line defined by the stress layer.

5. The method of claim 4 , wherein the handle wafer includes a conductive plane for noise reduction.

6. The method of claim 5 , wherein the handle wafer further includes an electric insulator.

Assignments (32)