Semiconductor wafer and manufacturing process for semiconductor device
View Patent ↗A semiconductor wafer 1 has first scribe lines 31 in two mutually perpendicular directions which have a first width and divide the semiconductor wafer 1 into a plurality of areas; second scribe lines 32 which have a second width smaller than the first width and divide the area into a plurality of semiconductor chip areas 2 ; an electrode pad 5 formed along the edge of the semiconductor chip area 2 ; and a metal-containing accessory pattern 4 disposed in the scribe lines. In the second scribe lines 32 , the accessory pattern 4 is absent in at least the outermost surface in an area adjacent to the edge having the electrode pad 5 in the chip area 2.
1. A semiconductor wafer, comprising
a plurality of first scribe lines extending in two mutually perpendicular directions,
said first scribe lines having a first width and dividing the semiconductor wafer into a plurality of areas;
a plurality of second scribe lines having a second width smaller than the first width, said second scribe lines dividing the area into a plurality of semiconductor chip areas;
an electrode pad formed along an edge of the chip area; and
a metal-containing accessory pattern disposed in the first and second scribe lines,
wherein in the second scribe lines, the metal-containing accessory pattern is absent in at least an outermost surface in an area adjacent to the edge having the electrode pad in the semiconductor chip area,
and wherein the metal-containing accessory pattern is formed in an area where the second scribe lines intersect each other.
2. The semiconductor wafer as claimed in claim 1 , wherein the metal-containing accessory pattern is an alignment mark.
3. The semiconductor wafer as claimed in claim 1 , wherein the first width is 60 μm to 120 μm both inclusive and the second width is less than 60 μm.
4. The semiconductor wafer as claimed in claim 1 , wherein a plurality of the metal-containing accessory pattern are disposed as a cross in two crossing first scribe lines.
5. The semiconductor wafer as claimed in claim 1 , further comprising a plurality of third scribe lines having a third width larger than the first width, wherein a metal-containing accessory pattern is formed in said third scribe line.
6. The semiconductor wafer as claimed in claim 5 , wherein the first width is 60 μm to 120 μm both inclusive and the second width is less than 60 μm and the third width is more than 120 μm.
7. The semiconductor wafer as claimed in claim 1 , wherein at least one groove is formed in the second scribe lines, such that the metal-containing accessory pattern is absent in at least the outermost surface in an area adjacent to the edge having the electrode pad in the semiconductor chip area.
8. The semiconductor wafer as claimed in claim 7 , wherein the at least one groove penetrates an interlayer insulating film to reach a silicon layer in the semiconductor wafer.
9. The semiconductor wafer as claimed in claim 7 , wherein the at least one groove penetrates an interlayer insulating film but does not reach a silicon layer in the semiconductor wafer.
10. The semiconductor wafer as claimed in claim 7 , wherein the at least one groove is a laser irradiation groove.
11. The semiconductor wafer as claimed in claim 1 , wherein two parallel grooves are formed in the second scribe lines, such that the metal-containing accessory pattern is absent in at least the outermost surface in an area adjacent to the edge having the electrode pad in the semiconductor chip area.
12. The semiconductor wafer as claimed in claim 11 , wherein the grooves penetrate an interlayer insulating film to reach a silicon layer in the semiconductor wafer.
13. The semiconductor wafer as claimed in claim 11 , wherein the grooves penetrate an interlayer insulating film but do not reach a silicon layer in the semiconductor wafer.
14. The semiconductor wafer as claimed in claim 11 , wherein the grooves are laser irradiation grooves.
15. The semiconductor wafer as claimed in claim 1 , wherein the electrode pad is not contaminated by scattered metal contained in the accessory pattern.
16. A semiconductor wafer, comprising
a plurality of first scribe lines extending in two mutually perpendicular directions,
said first scribe lines having a first width and dividing the semiconductor wafer into a plurality of areas;
a plurality of second scribe lines having a second width smaller than the first width, said second scribe lines dividing the area into a plurality of semiconductor chip areas;
at least one groove formed in the plurality of second scribe lines;
an electrode pad formed along an edge of the chip area; and
a metal-containing accessory pattern disposed in the first and second scribe lines,
wherein in the second scribe lines, the metal-containing accessory pattern is absent in at least an outermost surface in an area adjacent to the edge having the electrode pad in the semiconductor chip area, so that the electrode pad is not contaminated by scattered metal contained in the accessory pattern,
and wherein the metal-containing accessory pattern is formed in an area where the second scribe lines intersect each other.