SOI substrate and method for manufacturing the same
View Patent ↗The SOI substrate 1 has a supporting substrate 10 , an insulating layer 20 formed on the supporting substrate 10 and a silicon layer 30 formed on the insulating layer 20 . A through electrode 40 is provided in a device formation region A 1 of the SOI substrate 1 . The through electrode 40 reaches the insulating layer 20 from the silicon layer 30 . Specifically, the through electrode 40 extends to an inner part of the insulating layer 20 originating from a surface of the silicon layer 30 while penetrating the silicon layer 30 . Here, an end face 40 a of the through electrode 40 at the insulating layer 20 side stops inside the insulating layer 20.
1. An SOI substrate which has an insulating layer and a silicon layer on said insulating layer comprising:
a through electrode reaching said insulating layer from said silicon layer, wherein said insulating layer includes an etch-stop film, and
wherein an end face of said through electrode at said insulating layer side stops inside said insulating layer while said through electrode penetrates through said etch-stop film.
2. The SOI substrate according to claim 1 , wherein said etch-stop film is composed of SiN.
3. The SOI substrate according to claim 2 , wherein said insulating layer includes a silicon oxide film provided on an opposite side of said silicon layer from said etch-stop film.
4. The SOI substrate according to claim 1 , wherein the thickness of said insulating layer is not less than 100 nm and not more than 800 nm.
5. The SOI substrate according to claim 1 , further comprising a polysilicon plug in said silicon layer.
6. The SOI substrate according to claim 5 , wherein said polysilicon plug is in contact with a side face of said through electrode.
7. An SOI substrate which has an insulating layer and a silicon layer on said insulating layer comprising:
a through electrode penetrating said silicon layer and partially embedded in said insulating layer,
wherein said insulating layer includes an etch-stop film, and
wherein an end face of said through electrode at said insulating layer side stops inside said insulating layer while said through electrode penetrates through said etch-stop film.
8. The SOI substrate according to claim 7 , wherein said insulating layer includes a first insulating film and a second insulating film; and
said etch-stop film is disposed between said first insulating film and said second insulating film.
9. The SOI substrate according to claim 8 , wherein said first insulating film and said second insulating film are composed of silicon oxide.
10. The SOI substrate according to claim 9 , wherein said etch-stop film is composed of SiN.
11. The SOI substrate according to claim 7 , further comprising a polysilicon plug provided in said silicon layer.
12. The SOI substrate according to claim 11 , wherein said polysilicon plug is in contact with a side face of said through electrode.