Granted Patent B2

US 7,186,596 · App. 11/158,022 · Granted Mar 6, 2007

Abstract

Claims (27)

1. A method for making a semiconductor device, comprising:

providing a semiconductor stack comprising a semiconductor substrate, a first semiconductor layer, and a first dielectric layer disposed between the substrate and the first semiconductor layer;

forming a first trench in the semiconductor stack which extends through the first semiconductor layer and the first dielectric layer, wherein the bottom of the first trench exposes a portion of the substrate;

forming a doped region in the exposed portion of the substrate at the bottom of the trench; and

forming cathode and anode regions in the doped region.

2. The method of claim 1 , wherein the first trench extends into the substrate.

3. The method of claim 1 , wherein the first trench does not extend through the substrate.

4. The method of claim 1 , wherein the stack includes a second dielectric layer, and wherein the first trench extends through the second dielectric layer.

5. The method of claim 1 , further comprising:

forming an interlayer dielectric (ILD) over the second dielectric layer;

forming second and third trenches which extend through the ILD and expose at least a portion of the anode and cathode regions, respectively; and

forming electrical contacts in the second and third trenches.

6. The method of claim 5 , wherein the ILD is formed by a deposition process, and wherein the ILD is subjected to chemical mechanical planarization (CMP) before the step of forming electrical contacts in the second and third trenches.

7. The method of claim 5 , wherein the ILD is formed by a deposition process, and wherein the ILD is subjected to chemical mechanical planarization (CMP) after the step of forming electrical contacts in the second and third trenches.

8. The method of claim 5 , wherein the ILD comprises a material selected from the group consisting of silicon nitride and boron nitride.

9. The method of claim 1 , wherein the anode and cathode regions are formed by depositing a layer of spacer material over the doped region, and patterning the layer of spacer material such that first and second portions of the doped region are exposed.

10. The method of claim 9 , further comprising implanting anode and cathode regions in the first and second portions, respectively, of the doped region.

11. The method of claim 10 wherein, after the anode and cathode regions are implanted, the structure is subjected to silicidation.

12. The method of claim 11 , wherein the layer of spacer material is patterned such that a spacer structure is formed between the anode and cathode regions.

13. The method of claim 12 , wherein the layer of spacer material is patterned such that the spacer material covers substantially the entire surface of the doped region exclusive of the anode and cathode regions.

14. The method of claim 13 , wherein the semiconductor device is a vertical diode.

15. The method of claim 1 , wherein the doped region comprises an N-well.

16. The method of claim 15 , wherein the doped region further comprises N+ and P+ regions.

17. The method of claim 15 , wherein the N+ region is formed through an implantation process utilizing a material selected from the group consisting of phosphorous and arsenic.

18. The method of claim 1 , wherein the step of forming the doped region includes the steps of epitaxially growing a layer of semiconductor material on the portion of the substrate exposed within the first trench.

19. The method of claim 1 , wherein the step of forming electrical contacts in the second and third trenches comprises the step of backfilling the second and third trenches with an electrode material.

20. The method of claim 1 , wherein the doped region is a deep well.

Assignments (31)