Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level
View Patent ↗A MEMS device ( 100 ) is provided that includes a handle layer ( 108 ) having a sidewall ( 138 ), a cap ( 132 ) overlying said handle layer ( 108 ), said cap ( 132 ) having a sidewall ( 138 ), and a conductive material ( 136 ) disposed on at least a portion of said sidewall of said cap ( 138 ) and said sidewall of said handle layer ( 138 ) to thereby electrically couple said handle layer ( 108 ) to said cap ( 132 ). A wafer-level method for manufacturing the MEMS device from a substrate ( 300 ) comprising a handle layer ( 108 ) and a cap ( 132 ) overlying the handle layer ( 108 ) is also provided. The method includes making a first cut through the cap ( 132 ) and at least a portion of the substrate ( 300 ) to form a first sidewall ( 138 ), and depositing a conductive material ( 136 ) onto the first sidewall ( 138 ) to electrically couple the cap ( 132 ) to the substrate ( 300 ).
1. A method of forming a micro-electromechanical systems (“MEMS”) device comprising:
providing a substrate comprising a handle layer, a cap overlying the handle layer, and at least one MEMS device element;
making a first cut through the cap and at least a portion of the handle layer to form a first sidewall; and
depositing a conductive material onto the first sidewall to electrically couple the cap to the handle layer.
2. The method of claim 1 , further comprising making a second cut at an angle relative to the first sidewall through the cap and another portion of the substrate to form a second sidewall and a trench between the first sidewall and second sidewall.
3. The method of claim 2 , wherein the step of making the second cut comprises forming the second sidewall adjacent the first sidewall.
4. The method of claim 3 , wherein the step of making the second cut comprises forming an angle of less than about 60 degrees between the first sidewall and the second sidewall.
5. The method of claim 2 , wherein the step of depositing the conductive material comprises filling the trench with the conductive material.
6. The method of claim 5 , wherein the substrate has a first die area and a second die area, and the method further comprises sawing through the conductive material and substrate to singulate the first die area from the second die area.
7. The method of claim 1 , wherein the step of making the first cut comprises using a bevel-shaped blade to make a single bevel cut through the cap and a portion of the substrate.
8. The method of claim 1 , wherein the step of making the first cut comprises making the first cut through the cap and at least a portion of the handle layer.
9. The method of claim 1 , wherein the step of depositing the conductive material comprises: placing a mask over the substrate that covers a portion of the cap and exposes the first sidewall.
10. The method of claim 1 , wherein the step of depositing the conductive material comprises:
sputtering a layer of the conductive material over the first sidewall.
11. The method of claim 1 , wherein the substrate has a first die area and a second die area, and the step of making the first cut comprises making the cut between the first die area and the second die area.
12. The method of claim 1 , wherein the substrate has a first die area and a second die area, and the method farther comprises cutting through the conductive material and substrate to singulate the first die area from the second die area.
13. A method of forming a MEMS device comprising:
providing a substrate comprising a handle layer, a sacrificial layer disposed over the handle layer, an active layer disposed over the sacrificial layer, a plurality of MEMS device elements formed within the active layer, a cap anchor disposed over the active layer, and a cap disposed over the cap anchor;
making a first cut through the cap, the cap anchor, the active layer, the sacrificial layer, and a portion of the handle layer;
placing a second cut through the cap, the cap anchor, the active layer, the sacrificial layer, and a portion of the handle layer, the second bevel cut angled relative to the first bevel cut to form a trench; and
depositing a conductive material into the trench that contacts the cap, the cap anchor and the handle layer.
14. The method of claim 13 , wherein the step of placing the second cut comprises placing the second bevel cut adjacent the first sidewall to form a V-shaped trench.
15. The method of claim 14 , wherein the step of placing the second cut comprises forming an angle of less than about 60 degrees between the first cut and the second cut.
16. The method of claim 13 , wherein the step of depositing the conductive material comprises filling the trench with a conductive epoxy.
17. The method of claim 13 , wherein the step of making the first cut comprises using a bevel-shaped blade to make a single bevel cut through the cap and a portion of the substrate.
18. The method of claim 13 , wherein the substrate has a first die area and a second die area, and the method further comprises sawing through the conductive epoxy and handle layer to singulate the first die area from the second die area.