Manufacturing apparatus of magnetoresistance elements
A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0×10 −3 Pa or less in the vicinity of a substrate using a sputtering apparatus. The apparatus includes a vacuum chamber in which a cathode and a substrate holder are arranged, a first exhausting apparatus connected to an exhausting port of the vacuum chamber, a gas introduction mechanism to introduce a gas toward the target, a first pressure regulator to cause a pressure difference between a target space and a center space outside the target space, a second pressure regulator to cause a pressure difference between the center space and a substrate space, and a second exhausting apparatus to exhaust the center space.
1. A sputtering apparatus for manufacturing a magnetoresistance element with a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, said apparatus comprising:
a chamber;
a cathode which is configured and positioned in said chamber to hold a target for forming at least a thin film of the non-magnetic intermediate layer or the free magnetic layer;
a substrate holder which is configured and positioned in said chamber to hold a substrate;
a gas introduction mechanism which introduces a gas to a target space in a vicinity of a surface of the target;
a first partition member which is composed of a first tapered cylinder member whose diameter is decreased toward the substrate, and is arranged so as to surround the target and which restricts gas flow at a position between the target and the substrate, the target space being formed within the first tapered cylinder member;
a second partition member which is composed of a second tapered cylinder member whose diameter is decreased toward the substrate, and is arranged so as to surround the first tapered cylinder member and the substrate, and which restricts gas flow at a position between the first tapered cylinder member and the substrate, a center space being formed between the first tapered cylinder member and the second tapered cylinder member, and a substrate space being formed outside the second tapered cylinder member;
a first exhausting apparatus which exhausts the substrate space and makes the substrate space at a pressure lower than a pressure of said center space; and
a second exhausting apparatus which exhausts said center space and makes said center space at a pressure lower than a pressure of said target space.
2. The apparatus according to claim 1 , wherein the first exhausting apparatus exhausts said substrate space and makes said substrate space at a pressure of 8.0×10 −3 Pa or less.
3. The apparatus according to claim 2 , wherein the gas introduction mechanism introduces the gas to the target space at a pressure of 1.0×10 −2 Pa or more.
4. The apparatus according to claim 1 , wherein the second exhausting apparatus is disposed behind the target.