EUV light source collector lifetime improvements
View Patent ↗An apparatus and method for cleaning a plasma source material compound from a plasma produced EUV light source collector optic which may comprise reacting the plasma source material compound with hydrogen to form a hydride of the plasma source material from the plasma source material contained in the plasma source material compound on the collector optic. The method may further comprise initiating the reacting by introducing hydrogen into a plasma formation chamber containing the collector optic, and may further comprise removing the hydride from the collector optic, e.g., by cleaning plasma action and/or plasma source material sputtering, or other means as may be determined to be effective. An apparatus and method of extending the useful life of a plasma produced EUV light source collector coating layer may comprise in situ replacement of the material of the coating layer by deposition of the coating layer material onto the coating layer.
1. A method of cleaning a plasma source material compound from a plasma produced EUV light source collector optic comprising:
reacting the plasma source material compound with hydrogen to form a non-volatile hydride of the plasma source material from the plasma source material contained in the plasma source material compound on the collector optic; and
removing the hydride from the collector by cleaning plasma action, plasma source material sputtering, or cleaning plasma action and plasma source material sputtering.
2. The method of claim 1 further comprising:
initiating the reacting by introducing hydrogen into a plasma formation chamber containing the collector optic.
3. The method of claim 1 further comprising:
removing the hydride from the collector optic.
4. The method of claim 2 further comprising:
removing the hydride from the collector optic.
5. The method of claim 3 further comprising:
the plasma source material comprises lithium and the plasma source material compound comprise a compound of lithium and oxygen, a compound of lithium and carbon, or a compound of lithium, oxygen and carbon.
6. The method of claim 4 further comprising:
the plasma source material comprises lithium and the plasma source material compound comprise a compound of lithium and oxygen, a compound of lithium and carbon, or a compound of lithium, oxygen and carbon.
7. The method of claim 1 further comprising:
the plasma source material comprises lithium and the plasma source material compound comprise a compound of lithium and oxygen, a compound of lithium and carbon, or a compound of lithium, oxygen and carbon.
8. A method of extending the useful life of a plasma produced EUV light source collector coating layer comprising:
in situ replacement of the material of the coating layer by deposition of the coating layer material onto the coating layer.
9. The method of claim 8 further comprising:
the deposition process has a saturation limit such that the process is non-sensitive to exact proportions.
10. The method of claim 8 further comprising:
the deposition process is complementary such that cycles are repeatable.
11. The method of claim 9 further comprising:
the deposition process is complementary such that cycles are repeatable.
12. The method of claim 8 further comprising:
the material of the coating layer comprises ruthenium.
13. The method of claim 9 further comprising:
the material of the coating layer comprises ruthenium.
14. The method of claim 10 further comprising:
the material of the coating layer comprises ruthenium.
15. The method of claim 11 further comprising:
the material of the coating layer comprises ruthenium.
16. The method of claim 8 further comprising:
the deposition is carried out by atomic layer deposition.
17. The method of claim 9 further comprising:
the deposition is carried out by atomic layer deposition.
18. The method of claim 10 further comprising:
the deposition is carried out by atomic layer deposition.
19. The method of claim 11 further comprising:
the deposition is carried out by atomic layer deposition.
20. The method of claim 12 further comprising:
the deposition is carried out by atomic layer deposition.
21. The method of claim 13 further comprising:
the deposition is carried out by atomic layer deposition.
22. The method of claim 14 further comprising:
the deposition is carried out by atomic layer deposition.
23. The method of claim 15 further comprising:
the deposition is carried out by atomic layer deposition.
24. The method of claim 1 , wherein the cleaning plasma action comprises an RF plasma used for cleaning.