Memory device with improved data retention
The present memory device includes first and second electrodes, a passive layer between the first and second electrodes and an active layer between the first and second electrodes, the active layer being of a material containing randomly oriented pores which are interconnected to form passages through the active layer.
1 . A memory device comprising:
first and second electrodes;
a passive layer between the first and second electrodes; and
an active layer between the first and second electrodes, the active layer comprising material containing pores which are interconnected.
2 . The memory device of claim 1 wherein the pores are randomly oriented.
3 . The memory structure of claim 2 wherein the interconnected pores provide passages through the active layer.
4 . The memory device of claim 3 wherein the active layer comprises organic material.
5 . The memory device of claim 3 wherein the passive layer comprises copper sulfide.
6 . The memory device of claim 3 wherein the active layer comprises spin-on material.
7 . The memory device of claim 3 wherein the active layer is a polymer.
8 . The memory device of claim 7 wherein the active layer is a methylated siloxane polymer.
9 . The memory device of claim 7 wherein the active layer is a siloxane spin-on glass.
10 . The memory device of claim 7 wherein the active layer is methyl silsequioxane (MSQ).
11 . A method of fabricating a memory device comprising:
providing a first electrode;
providing a passive layer on the first electrode;
providing an active layer on the passive layer, the active layer containing interconnected pores; and
providing a second electrode on the active layer.
12 . The method of claim 11 wherein the pores are randomly oriented.
13 . The method of claim 12 wherein the interconnected pores provide passages through the active layer.
14 . The method of claim 13 wherein the active layer is spun onto the passive layer.
15 . The method of claim 13 wherein the active layer comprises organic material.
16 . The method of claim 15 wherein the active layer is a polymer.
17 . The method of claim 16 wherein the active layer is a methylated siloxane polymer.
18 . The memory device of claim 16 wherein the active layer is a siloxane spin-on glass.
19 . The memory device of claim 16 wherein the active layer is methyl silsequioxane (MSQ).