Stackable memory device and organic transistor structure
In the present electronic structure, a first electronic device includes a first pair of electrodes and an active layer between the first pair of electrodes. An organic transistor is made up of organic material, a source, a drain, and a gate, one of the first pair of electrodes being connected to one of the source and drain of the organic transistor. A second electronic device includes a second pair of electrodes and an active layer between the second pair of electrodes, one of the second pair of electrodes being in contact with an insulating body adjacent the organic transistor.
1 . An electronic structure comprising:
an electronic device comprising first and second electrodes and an active layer between the first and second electrodes;
an organic transistor comprising organic material, a source, a drain, and a gate;
one of the source and drain of the organic transistor being connected to one of the first and second electrodes.
2 . The electronic structure of claim 1 wherein the electronic device and organic transistor are in layered relationship.
3 . The electronic structure of claim 1 wherein the electronic device further comprises a passive layer between the first and second electrodes.
4 . The electronic structure of claim 2 wherein the one of the source and drain of the organic transistor is in contact with the one of the first and second electrodes.
5 . The electronic structure claim 2 wherein the electronic device is a memory device.
7 . The electronic structure of claim 2 wherein the active layer is an organic layer.
8 . The electronic structure of claim 2 wherein the active layer is an inorganic layer.
9 . An electronic structure comprising
a first electronic device comprising a first pair of electrodes and an active layer between the first pair of electrodes;
an organic transistor comprising organic material, a source, a drain, and a gate;
one of the first pair of electrodes being connected to one of the source and drain of the organic transistor;
an insulating body adjacent the organic transistor; and
a second electronic device comprising a second pair of electrodes and an active layer between the second pair of electrodes;
one of the second pair of electrodes being in contact with the insulating body.
10 . The electronic structure of claim 9 wherein the first electronic device, organic transistor, and second electronic device are in layered relationship.
11 . The electronic structure of claim 10 wherein the one of the first pair of electrodes is in contact with the one of the source and drain of the organic transistor.
12 . The electronic structure of claim 10 wherein the first electronic device further comprises a passive layer between the first pair of electrodes.
13 . The electronic structure of claim 10 wherein the second electronic device further comprises a passive layer between the second pair of electrodes.
14 . The electronic structural claim 10 wherein the first electronic device further comprises a passive layer between the first pair of electrodes, and the second electronic device further comprises a passive layer between the second pair of electrodes.
15 . The electronic structure of claim 14 wherein the first electronic device is a first memory device, and the second electronic devices a second memory device.
16 . The electronic structure of claim 9 and further comprising a second organic transistor comprising organic material, a source, a drain and a gate, the other of the second pair of electrodes being connected to one of the source and drain of the second organic transistor.
17 . The electronic structure of claim 16 wherein the first-mentioned electronic device, the first-mentioned organic transistor, second electronic device, and second organic transistor are in layered relationship.
18 . The electronic structure of claim 17 wherein the one of the first pair of electrodes is in contact with the one of the source and drain of the first organic transistor, and the other of the second pair of electrodes is in contact with the one of the source and drain of the second organic transistor.