Resistivity changing memory cell having nanowire electrode
View Patent ↗A memory cell includes a first electrode comprising a nanowire, a second electrode, and phase-change material between the first electrode and the second electrode.
1. An integrated circuit having a memory cell comprising:
a first electrode comprising a nanowire;
a second electrode; and
resistivity changing material between the first electrode and the second electrode,
wherein a portion of the nanowire is laterally surrounded by the resistivity changing material.
2. The integrated circuit of claim 1 , further comprising:
a catalyst material contacting the first electrode; and
a landing pad contacting the catalyst material.
3. The integrated circuit of claim 2 , wherein the catalyst material is selected from the group consisting of Ti, Pd, Pt, Au, Cu, Co, Cr, Hf, Ir, Mn, Mo, Ni, Rh, Ta, W, and Zr.
4. The integrated circuit of claim 2 , wherein the landing pad comprises one of tungsten and copper.
5. The integrated circuit of claim 2 , wherein the landing pad comprises a metal silicide.
6. The integrated circuit of claim 1 , wherein the resistivity changing material comprises a chalcogenide.
7. A memory cell comprising:
a first electrode comprising a nanowire;
a second electrode; and
phase-change material between the first electrode and the second electrode,
wherein a portion of the nanowire is laterally surrounded by the phase-change material.
8. The memory cell of claim 7 , further comprising:
a catalyst material contacting the first electrode; and
a landing pad contacting the catalyst material.
9. The memory cell of claim 8 , wherein the catalyst material is selected from the group consisting of Ti, Pd, Pt, Au, Cu, Co, Cr, Hf, Ir, Mn, Mo, Ni, Rh, Ta, W, and Zr.
10. The memory cell of claim 8 , wherein the landing pad comprises one of tungsten and copper.
11. The memory cell of claim 8 , wherein the landing pad comprises a metal silicide.
12. The memory cell of claim 7 , wherein the phase-change material comprises a chalcogenide.
13. An integrated circuit having a memory cell comprising:
a first electrode comprising a nanowire;
a second electrode; and
resistive memory material between the first electrode and the second electrode,
wherein a portion of the nanowire is laterally surrounded by the resistive memory material.
14. The integrated circuit of claim 13 , further comprising:
a catalyst material contacting the first electrode; and
a landing pad contacting the catalyst material.
15. The integrated circuit of claim 14 , wherein the catalyst material is selected from the group consisting of Ti, Pd, Pt, Au, Cu, Co, Cr, Hf, Ir, Mn, Mo, Ni, Rh, Ta, W, and Zr.
16. The integrated circuit of claim 14 , wherein the landing pad comprises one of tungsten and copper.
17. The integrated circuit of claim 14 , wherein the landing pad comprises a metal silicide.
18. The integrated circuit of claim 13 , wherein the resistive memory material comprises a chalcogenide.