Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device

1. A method of forming a silica-based film, the method comprising:

applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating;

heating the coating; and

applying heat and ultraviolet radiation to the coating to effect a curing treatment;

wherein the composition includes:

a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of compounds shown by the following general formula (A), and at least one silane compound selected from the group consisting of compounds shown by the following general formula (B) and compounds shown by the following general formula (C); and

an organic solvent,

wherein R 1 to R 8 individually represent an alkyl group or an aryl group, and X represents the following general formula (A1) or (A2),

wherein Y 1 to Y 8 individually represent a hydrogen atom, a fluorine atom, an alkyl group, or an aryl group, provided that Y 1 and Y 2 or Y 5 and Y 6 may form a ring in combination,

(R 9 ) a —Si—(OR 10 ) 4-a   (B)

wherein R 9 and R 10 represent an alkyl group or an aryl group, and a represents an integer from 0 to 3,

R 11 b (R 12 O) 3-b Si—(R 15 ) d —Si(OR 13 ) 3-c R 14 c   (C)

wherein R 11 to R 14 individually represent an alkyl group or an aryl group, b and c individually represent an integer from 0 to 2, R 15 represents an oxygen atom, a phenylene group, or a group —(CH 2 ) m —(wherein m represents an integer from 1 to 6), and d represents 0 or 1.

2. The method according to claim 1 , wherein the heat and the ultraviolet radiation are applied at the same time.

3. The method according to claim 1 , wherein the heating is performed at 100 to 450° C.

4. The method according to claim 1 , wherein the ultraviolet radiation has a wavelength of 250 nm or less.

5. A silica-based film having a dielectric constant of 1.5 to 3.2, a film density of 0.7 to 1.3 g/cm 3 , and a water contact angle of 60 degrees or more, the silica-based film being obtained by the method according to any of claims 1 to 4 .

6. An interconnect structure, comprising the silica-based film according to claim 5 as an interlayer dielectric.

7. A semiconductor device, comprising the interconnect structure according to claim 6 .

8. A composition for forming an insulating film for a semiconductor device, which is used in the method according to any of claims 1 to 4 and is cured by using heat and ultraviolet radiation, the composition comprising:

a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of the compounds shown by the general formula (A), and at least one silane compound selected from the group consisting of the compounds shown by the general formula (B) and the compounds shown by the general formula (C); and

an organic solvent.

9. The composition according to claim 8 , wherein the content of the compounds shown by the general formula (A) in the silane compound is 60 mol % or less.

10. The composition according to claim 8 , wherein two or more silane compounds selected from the group consisting of the compounds shown by the general formula (B) and the compounds shown by the general formula (C) are used.

11. The composition according to claim 10 , wherein the two or more silane compounds selected from the group consisting of the compounds shown by the general formula (B) and the compounds shown by the general formula (C) are an alkyltrialkoxysilane and a tetraalkoxysilane.

12. The composition according to claim 8 , which does not include an ultraviolet radiation active reaction promoter.

13. The composition according to claim 12 , wherein the reaction promoter is one of, or a combination of, a reaction initiator, an acid generator, a base generator, and a sensitizer having an ultraviolet radiation absorption function.

14. The composition according to claim 8 , wherein the content of Na, K, and Fe is respectively 100 ppb or less.

15. The composition according to claim 8 , wherein the ultraviolet radiation has a wavelength of 250 nm or less.