Optical proximity correction method utilizing phase-edges as sub-resolution assist features
A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge.
1. A photolithography mask for optically transferring a pattern formed in said mask onto a substrate, said mask comprising:
a plurality of resolvable features to be printed on said substrate; and
at least one non-resolvable optical proximity correction feature, said at least one non-resolvable optical proximity correction feature being a phase-edge,
wherein said at least one non-resolvable phase-edge is the sole optical proximity correction feature positioned between a first resolvable feature and a second resolvable feature.
2. The photolithography mask of claim 1 , wherein said phase-edge has a width dimension substantially equal to zero.
3. The photolithography mask of claim 1 , wherein said phase-edge effects a phase-shift of 180°.
4. The photolithography mask of claim 1 , wherein said phase-edge effects a phase-shift of greater than 0°.
5. The photolithography mask of claim 1 , wherein said mask comprises a quartz substrate, said at least one non-resolvable phase-edge being formed by etching said quartz substrate.
6. The photolithography mask of claim 1 , wherein said mask forms a chromeless phase-shift mask.
7. The photolithography mask of claim 1 , wherein said mask is illuminated utilizing off-axis illumination.
8. The photolithography mask of claim 1 , wherein said non-resolvable feature is spaced apart from said given one of said resolvable features so as to maximize the depth of focus of an imaging system for a given feature size.
9. The photolithography mask of claim 1 , wherein said first resolvable feature and said second resolvable feature are densely spaced.
10. A computer program product for controlling a computer comprising a recording medium readable by the computer, means recorded on the recording medium for directing the computer to generate at least one file corresponding to a photolithography mask for optically transferring a pattern formed in said mask onto a substrate, said mask comprising:
a plurality of resolvable features to be printed on said substrate; and
at least one non-resolvable optical proximity correction feature, said at least one non-resolvable optical proximity correction feature being a phase-edge,
wherein said at least one non-resolvable phase-edge is the sole optical proximity correction feature positioned between a first resolvable feature and a second resolvable feature.
11. The computer program product of claim 10 , wherein said phase-edge has a width dimension substantially equal to zero.
12. The computer program product of claim 10 , wherein said phase-edge effects a phase-shift of 180°.
13. The computer program product of claim 10 , wherein said phase-edge effects a phase-shift of greater than 0°.
14. The computer program product of claim 10 , wherein said mask comprises a quartz substrate, said at least one non-resolvable phase-edge being formed by etching said quartz substrate.
15. The computer program product of claim 10 , wherein said mask forms a chromeless phase-shift mask.
16. The computer program product of claim 10 , wherein said mask is illuminated utilizing off-axis illumination.
17. The computer program product of claim 10 , wherein said non-resolvable feature is spaced apart from said given one of said resolvable features so as to maximize the depth of focus of an imaging system for a given feature size.
18. The computer program product of claim 10 , wherein said first resolvable feature and said second resolvable feature are densely spaced.