IP Library Granted Patent US 7,304,906
Granted Patent B2
US 7,304,906 · App. 11/190,222 · Granted Dec 4, 2007

Method of controlling mode register set operation in memory device and circuit thereof

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,304,906
App. No.
11/190,222
Granted
Dec 4, 2007
Kind
B2
Abstract

Disclosed is a method of controlling an MRS operation in a memory device which can prevent an unnecessary MRS operation due to a malfunction of the memory device at a time when the memory device exits from a self-refresh mode. According to this method, external addresses are used to intercept a mode register set command signal that enables the MRS operation at a time point at which the memory device exits from the self-refresh mode.

Claims (12)

1. A method of controlling a mode register set (MRS) operation in a memory device when the memory device exits from a self-refresh mode, the method comprising the step of:

intercepting a mode register set command signal that enables the MRS operation using an external address applied to an address decoding circuit through a plurality of address pins for deciding a burst length and a column address strobe (CAS) latency, said mode register set command signal enabling the MRS operation, after the memory device exits a self-refresh mode; and

simultaneously with the interception of the mode register set command signal, receiving a plurality of address signals of the memory device and disabling the transmission of the mode register set command signal to a memory device through a transmission gate, when the plurality of address signals are logic zero.

2. The method as claimed in claim 1 , wherein the external address applied to the address pins is in a logic low state.

3. The method as claimed in claim 1 , wherein the mode register set command signal is enabled when signals of /CS (Chip Select), /RAS (Row Address Strobe), /CAS (Column Address Strobe) and /WE (Write Enable) are all in a logic low state.

4. The method as claimed in claim 1 , wherein the signals of /CS, /RAS, /CAS and /WE are all in a logic low state at the time when the memory device exits from the self-refresh mode.

5. A circuit for controlling a mode register set (MRS) operation in a memory device that receives an MRS-related control signal and outputting a mode register set command signal for enabling the MRS operation, the circuit comprising:

an input driver circuit that receives an external address, a mode decision address and the mode register set command signal the, the input driver circuit having an output, coupled to an input of a switching circuit, the switching circuit having an output and having a control input, the signal input to the control input of the switching circuit selectably enabling and disabling transmission of the signal output from the input driver circuit to a memory device from the switching circuit output; and

a control circuit that receives a plurality of address signals from a plurality of address lines, the control circuit having an output coupled to the control input of the switching circuit such that the switching circuit will block transmission of the mode register set command signal from the input driver circuit when the plurality of address lines input to said control circuit are logic zero.

6. The circuit as claimed in claim 5 , wherein if the switching circuit is enabled, the mode register set command signal is intercepted.

7. The circuit as claimed in claim 5 , wherein when the address lines input to the control circuit are at a logic zero state, the switching circuit is enabled.

8. The circuit as claimed in claim 5 , wherein the external address is applied through a plurality of address pins for deciding a burst length and a column address strobe (CAS) latency.

Assignments (4)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE IS HYNIX SEMICONDUCTOR INC. NOT HYNIX-SEMICONDUCTOR INC. THERE IS NO HYPHEN IN THE NAME. PREVIOUSLY RECORDED ON REEL 67328 FRAME 814. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF NAME. Recorded May 14, 2024
From: HYNIX SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067412/0482 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067369/0832 →
CHANGE OF NAME Recorded May 6, 2024
From: HYNIX-SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067328/0814 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2005
From: HA, SUNG JOO; KIM, TAE YUN
To: HYNIX SEMICONDUCTOR INC.
Reel/Frame 016823/0425 →