Packaged integrated circuit with enhanced thermal dissipation
View Patent ↗A semiconductor package ( 10 ) uses a plurality of thermal conductors ( 56 - 64 ) that extend upward within an encapsulant ( 16 ) from one or more thermal bond pads ( 22, 24, 26 ) on a die ( 14 ) to disperse heat. The thermal conductors may be bond wires or conductive stud bumps and do not extend beyond a lateral edge of the die. One or more of the thermal conductors may be looped within the encapsulant and exposed at an upper surface of the encapsulant. In one form a heat spreader ( 68 ) is placed overlying the encapsulant for further heat removal. In another form the heat spreader functions as a power or ground terminal directly to points interior to the die via the thermal conductors. Active bond pads may be placed exclusively along the die's periphery or also included within the interior of the die.
1. A packaged integrated circuit comprising:
a semiconductor die overlying a substrate, the semiconductor die comprising a plurality of thermal bond pads overlying active circuitry;
a plurality of thermal bond wires, each of the plurality of thermal bond wires connected to at least one of the plurality of thermal bond pads, each of the plurality of thermal bond wires extending upward from the semiconductor die and terminating without extending beyond a perimeter of the semiconductor die; and
an encapsulant surrounding the semiconductor die, the plurality of thermal bond pads and the plurality of thermal bond wires, the plurality of thermal bond wires conducting heat from the semiconductor die to an upper surface of the encapsulant.
2. The packaged integrated circuit of claim 1 wherein one or more of the plurality of thermal bond wires extends to the upper surface of the encapsulant.
3. The packaged integrated circuit of claim 1 wherein at least one of the plurality of thermal bond wires is connected to two thermal bond pads by extending from a first of the two thermal bond pads away from a surface of the semiconductor die and returning toward the surface of the semiconductor die to connect to a second of the two thermal bond pads.
4. The packaged integrated circuit of claim 1 further comprising:
at least one conductive heat spreader overlying at least one of the plurality of thermal bond wires for conducting heat from the at least one of the plurality of thermal bond wires and radiating the heat from the packaged integrated circuit.
5. The packaged integrated circuit of claim 4 wherein at least one of the plurality of thermal bond wires is connected to the at least one conductive heat spreader to function as a power conductor or a ground conductor overlying the semiconductor die.
6. The packaged integrated circuit of claim 1 wherein a portion of the plurality of thermal bond pads are not connected to any active circuitry within the semiconductor die.
7. The packaged integrated circuit of claim 6 wherein the portion is substantially all of the plurality of thermal bond pads.
8. The packaged integrated circuit of claim 1 wherein at least one of the plurality of thermal bond pads is connected to a power or a ground terminal within the active circuitry.
9. The packaged integrated circuit of claim 1 further comprising:
a plurality of active bond pads positioned around a periphery of the semiconductor die within a pad ring region and electrically connected to respective package bond pads outside the perimeter of the semiconductor die.
10. A packaged integrated circuit comprising:
a semiconductor die overlying a substrate;
a plurality of active bond pads having an electrical function associated therewith and a plurality of thermal bond pads not having an electrical function associated therewith overlying the semiconductor die;
one or more thermal conductors connected to each of the plurality of thermal bond pads, each of the plurality of thermal conductors extending upward from the semiconductor die; and
an encapsulant surrounding the semiconductor die, the plurality of thermal bond pads, the plurality of active bond pads and the one or more thermal conductors, the thermal conductors conducting heat from the semiconductor die to an upper surface of the encapsulant.
11. The packaged integrated circuit of claim 10 wherein the one or more thermal conductors further comprise either a plurality of conductive stud bumps or a plurality of thermal bond wires.
12. The packaged integrated circuit of claim 10 wherein at least one of the one or more thermal conductors comprises a thermal bond wire that extends from a first of the plurality of thermal bond pads away from the semiconductor die and returning toward the semiconductor die to connect to a second of the plurality of thermal bond pads.
13. The packaged integrated circuit of claim 10 further comprising:
at least one conductive heat spreader overlying at least one of the one or more thermal conductors for conducting heat from the one or more thermal conductors.
14. The packaged integrated circuit of claim 13 wherein the conductive heat spreader is a signal conductor for conducting either a power supply voltage or a ground reference potential, the conductive heat spreader being in electrical contact with one or more of the one or more thermal conductors.
15. The packaged integrated circuit of claim 10 wherein the plurality of active bond pads is located within a peripheral region of the packaged integrated circuit and the plurality of thermal bond pads is located within a central region of the packaged integrated circuit, the one or more thermal conductors not extending beyond a peripheral edge of the semiconductor die.