Using standard pattern tiles and custom pattern tiles to generate a semiconductor design layout having a deep well structure for routing body-bias voltage

1. A method of generating a semiconductor design layout having a conductive sub-surface structure for routing voltage, said method comprising:

placing a plurality of blocks of said semiconductor design layout on a grid having a grid unit that is larger than a minimum dimension available for said semiconductor design layout,

determining a tile shape and a tile size such that said tile shape and said tile size fit an integer number of times into said grid unit;

performing a placement operation to place an array of standard pattern tiles having said tile shape and said tile size into said blocks, wherein pattern of said standard pattern tile is dependent on arrangement of said conductive sub-surface structure;

performing design layout verification;

if a design error is detected, identifying any standard pattern tile causing said design error; and

replacing any identified standard pattern tile with a custom pattern tile selected from a plurality of available custom pattern tiles, wherein each custom pattern tile has said tile shape and said tile size.

2. The method as recited in claim 1 further comprising:

repeating performance of said design layout verification;

if said design error continues to exist, identifying any tile causing said design error; and

replacing any identified tile with a custom pattern tile selected from said plurality of available custom pattern tiles.

3. The method as recited in claim 1 wherein said conductive sub-surface structure is utilized to route a body-bias voltage.

4. The method as recited in claim 1 wherein said conductive sub-surface structure is arranged as one of a diagonal sub-surface mesh structure, a diagonal sub-surface strip structure, an axial sub-surface mesh structure, and an axial sub-surface strip structure.

5. The method as recited in claim 1 wherein said conductive sub-surface structure has an N-type doping.

6. The method as recited in claim 1 wherein said conductive sub-surface structure has a P-type doping.

7. The method as recited in claim 1 wherein said replacing any identified standard pattern tile with a custom pattern tile comprises:

providing a tile pattern options window having said plurality of available custom pattern tiles;

selecting an identified standard pattern tile;

selecting said custom pattern tile from said plurality of available custom pattern tiles; and

replacing said identified standard pattern tile with said selected custom pattern tile.

8. The method as recited in claim 1 wherein said performing design layout verification and said performing said placement operation are performed separately for each of said blocks.

9. A computer-readable medium comprising computer-executable instructions stored therein for performing a method of generating a semiconductor design layout having a conductive sub-surface structure for routing voltage, said method comprising:

placing a plurality of blocks of said semiconductor design layout on a grid having a grid unit that is larger than a minimum dimension available for said semiconductor design layout;

determining a tile shape and a tile size such that said tile shape and said tile size fit an integer number of times into said grid unit;

performing a placement operation to place an array of standard pattern tiles having said tile shape and said tile size into said blocks, wherein pattern of said standard pattern tile is dependent on arrangement of said conductive sub-surface structure;

performing design layout verification;

if a design error is detected, identifying any standard pattern tile causing said design error; and

replacing any identified standard pattern tile with a custom pattern tile selected from a plurality of available custom pattern tiles, wherein each custom pattern tile has said tile shape and said tile size.

10. The computer-readable medium as recited in claim 9 wherein said method further comprises:

repeating performance of said design layout verification;

if said design error continues to exist, identifying any tile causing said design error; and

replacing any identified tile with a custom pattern tile selected from said plurality of available custom pattern tiles.

11. The computer-readable medium as recited in claim 9 wherein said conductive sub-surface structure is utilized to route a body-bias voltage.

12. The computer-readable medium as recited in claim 9 wherein said conductive sub-surface structure is arranged as one of a diagonal sub-surface mesh structure, a diagonal sub-surface strip structure, an axial sub-surface mesh structure, and an axial subsurface strip structure.

13. The computer-readable medium as recited in claim 9 wherein said conductive sub-surface structure has an N-type doping.

14. The computer-readable medium as recited in claim 9 wherein said conductive sub-surface structure has a P-type doping.

15. The computer-readable medium as recited in claim 9 wherein said replacing any identified standard pattern tile with a custom pattern tile comprises:

providing a tile pattern options window having said plurality of available custom pattern tiles;

selecting an identified standard pattern tile;

selecting said custom pattern tile from said plurality of available custom pattern tiles; and

replacing said identified standard pattern tile with said selected custom pattern tile.

16. The computer-readable medium as recited in claim 9 wherein said performing design layout verification and said performing said placement operation are performed separately for each of said blocks.

17. A semiconductor device comprising:

a conductive sub-surface structure for routing voltage formed from a semiconductor design layout comprising:

a plurality of blocks placed on a grid having a grid unit that is larger than a minimum dimension available for said semiconductor design layout,

an array of standard pattern tiles having a tile shape and a tile size that fit an integer number of times into said grid unit, wherein pattern of said standard pattern tile is dependent on arrangement of said conductive sub-surface structure, and

a plurality of custom pattern tiles having said tile shape and said tile size.

18. The semiconductor device as recited in claim 17 wherein said conductive sub-surface structure is utilized to route a body-bias voltage.

19. The semiconductor device as recited in claim 17 wherein said conductive sub-surface structure is arranged as one of a diagonal sub-surface mesh structure, a diagonal sub-surface strip structure, an axial sub-surface mesh structure, and an axial sub-surface strip structure.

20. The semiconductor device as recited in claim 17 wherein said conductive sub-surface structure has an N-type doping.

21. The semiconductor device as recited in claim 17 wherein said conductive sub-surface structure has a P-type doping.