Granted Patent B1

US 7,297,592 · App. 11/195,201 · Granted Nov 20, 2007

Abstract

Claims (46)

1. A method of manufacturing an integrated circuit comprising:

depositing a charge-trapping material over a semiconductor substrate, the depositing performed at an ultra-slow deposition rate without using a hydrogen containing carrier gas;

forming first and second bitlines in the semiconductor substrate;

depositing a wordline material over the charge-trapping material;

processing the wordline material using a photolithographic process to form a wordline;

depositing a data retention liner over the wordline and the charge-trapping material, the data retention layer having a reduced hydrogen content; and

depositing an interlayer dielectric layer over the data retention layer.

2. The method of manufacturing an integrated circuit as claimed in claim 1 wherein depositing the data retention liner deposits an extremely high-density material.

3. The method of manufacturing an integrated circuit as claimed in claim 1 wherein depositing the data retention liner uses a tetrachlorosilane deposition.

4. The method of manufacturing an integrated circuit as claimed in claim 1 wherein depositing the data retention liner uses plasma enhanced chemical vapor deposition at a temperature above 500° C. and below about 550° C.

5. The method of manufacturing an integrated circuit as claimed in claim 1 wherein depositing the data retention liner uses a plasma enhanced chemical vapor deposition at temperature below 550° C. with an anneal at a temperature above 600° C.

6. The method of manufacturing an integrated circuit as claimed in claim 1 including depositing a spacer layer and forming a spacer around the wordline and wherein depositing the data retention liner includes depositing the data retention liner over the spacer.

7. The method of manufacturing an integrated circuit as claimed in claim 1 wherein depositing the data retention liner deposits a nitride.

8. The method of manufacturing an integrated circuit as claimed in claim 1 including depositing a spacer layer and forming a spacer around the wordline before growing a salicide layer on the wordline.

9. The method of manufacturing an integrated circuit as claimed in claim 1 including implanting a threshold adjustment implant into the semiconductor substrate.

10. The method of manufacturing an integrated circuit as claimed in claim 1 wherein the charge-trapping material is composed of:

a first dielectric layer;

a charge-trapping layer over the first dielectric layer; and

a second dielectric layer over the charge-trapping layer.

11. A method of manufacturing an integrated circuit comprising:

depositing a charge-trapping material over a silicon substrate, the depositing performed at an ultra-slow deposition rate without using ammonia;

forming first and second bitlines in the silicon substrate;

depositing a wordline material over the charge-trapping material;

depositing a hard mask material over the wordline material;

depositing an anti-reflective coating material over the hard mask material;

depositing a photoresist material over the anti-reflective coating material;

processing the photoresist material and the anti-reflective coating material to form a photomask of a patterned photoresist material and a patterned anti-reflective coating material;

processing the hard mask material using the photomask to form a hard mask;

removing the patterned photoresist;

removing the patterned anti-reflective coating material without damaging material selected from a group consisting of the hard mask, the wordline material, and a combination thereof;

forming the wordline material using the hard mask and an anisotropic etch process to form a wordline;

removing the hard mask without damaging material selected from a group consisting of the wordline, the charge-trapping material, and a combination thereof;

depositing a data retention liner over the wordline and the charge-trapping material, the data retention layer having under about 2.7% nitrogen-hydrogen and silicon-hydrogen bondings; and

depositing an interlayer dielectric layer over the data retention layer.

12. The method of manufacturing an integrated circuit as claimed in claim 11 wherein depositing the data retention liner deposits a high-density material having a density greater than about 2.79 g/cc.

13. The method of manufacturing an integrated circuit as claimed in claim 11 wherein depositing the data retention liner uses a tetrachlorosilane deposition.

14. The method of manufacturing an integrated circuit as claimed in claim 11 wherein depositing the data retention liner uses plasma enhanced chemical vapor deposition at a temperature from 500° C. to 550° C.

15. The method of manufacturing an integrated circuit as claimed in claim 11 wherein depositing the data retention liner uses a plasma enhanced chemical vapor deposition at a temperature from 500° C. to 550° C. with an oxygen anneal at a temperature from 600° C. to 1000° C.

16. The method of manufacturing an integrated circuit as claimed in claim 11 depositing a spacer layer and forming a spacer around the wordline and wherein depositing the data retention liner includes depositing the data retention liner over the spacer.

17. The method of manufacturing an integrated circuit as claimed in claim 11 depositing the data retention liner deposits a nitride.

18. The method of manufacturing an integrated circuit as claimed in claim 11 depositing a spacer layer and forming a spacer around the wordline before growing a salicide layer on the wordline.

19. The method of manufacturing an integrated circuit as claimed in claim 11 including implanting a p-type threshold adjustment implant into the p-type silicon substrate.

20. The method of manufacturing an integrated circuit as claimed in claim 11 wherein the charge-trapping dielectric layer is composed of:

a first oxide layer;

a nitride layer over the first oxide layer; and

a second oxide layer over the nitride layer.

Assignments (9)