Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization
A method and apparatus for conditioning and monitoring a planarizing medium used for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a conditioning body having a conditioning surface that engages a planarizing surface of the planarizing medium and is movable relative to the planarizing medium. A force sensor is coupled to the conditioning body to detect a frictional force imparted to the conditioning body by the planarizing medium when the conditioning body and the planarizing medium are moved relative to each other. The apparatus can further include a feedback device that controls the motion, position, or force between the conditioning body and the planarizing medium to control the conditioning of the planarizing medium.
1. A method for monitoring polishing pads used for planarizing a microelectronic substrate, the method comprising:
engaging a conditioning body with a first planarizing surface of a first polishing pad;
applying a force to the first polishing pad via the conditioning body;
moving at least one of the first polishing pad and the conditioning body relative to the other of the first polishing pad and the conditioning body;
detecting a first frictional force of the first polishing pad on the conditioning body in a plane of the first planarizing surface;
engaging the conditioning body with a second planarizing surface of a second polishing pad;
applying a force to the second polishing pad via the conditioning body;
moving at least one of the second polishing pad and the conditioning body relative to the other of the second polishing pad and the conditioning body;
detecting a second frictional force of the second polishing pad on the conditioning body in a plane of the second planarizing surface; and
comparing the first and second frictional forces.
2. The method of claim 1 wherein applying a force to the first polishing pad includes applying a force to the conditioning body different than a weight of the conditioning body and wherein applying a force to the second polishing pad includes applying a force to the conditioning body different than the weight of the conditioning body.
3. The method of claim 1 , further comprising removing material from at least one of the first and second planarizing surfaces using the conditioning body.