Ferroelectric random access memory capacitor and method for manufacturing the same

1. A method for manufacturing a ferroelectric random access memory (FeRAM) capacitor, the method comprising the steps of:

a) preparing an active matrix including a semiconductor substrate, a source/drain region, FOX regions, a first ILD, a storage node contact;

b) forming a first conductive layer, a dielectric layer and a second conductive layer on the active matrix in sequence;

c) forming a hard mask on a predetermined location of the second conductive layer;

d) patterning the second conductive layer, the dielectric layer and the first conductive layer by using the hard mask, thereby forming a capacitor stack having a bottom electrode, a ferroelectric layer and a top electrode, a width of the capacitor stack being larger than that of the storage node contact;

e) forming a second ILD on the first ILD and the hard mask, wherein the second ILD embraces the capacitor stack;

f) planarizing the second ILD till the top face of the hard mask is exposed;

g) removing the hard mask to form an opening above the top electrode; and

h) forming a third conductive layer over the resultant structure and patterning into a predetermined configuration, thereby obtaining a plate line of which a width is larger than that of the capacitor stack, the plate line being electrically connected to the top electrode.

2. The method as recited in claim 1 , before the step b), further comprising the step of forming a first glue layer between the first ILD and the first conductive layer.

3. The method as recited in claim 2 , wherein the first glue layer uses Al 2 O 3 .

4. The method as recited in claim 2 , wherein the step of forming the first glue layer is carried out by using a method selected from the group consisting of an ALD, a CVD and the a PVD.

5. The method as recited in claim 2 , wherein the first glue layer has the thickness in a range of about 5 Å to about 50 Å.

6. The method as recited in claim 1 , wherein the step c) includes the steps of:

c1) forming a hard mask layer on the second conductive layer;

c2) forming a photoresist layer on the hard mask layer and patterning the photoresist layer into a preset configuration, thereby obtaining a photoresist pattern; and

c3) forming the hard mask by patterning the hard mask layer into a predetermined configuration by using the photoresist pattern as a mask.

7. The method as recited in claim 6 , wherein the hard mask uses a titanium nitride (TiN).

8. The method as recited in claim 6 , wherein the hard mask uses a tantalum nitride (TaN).

9. The method as recited in claim 1 , wherein the hard mask layer is formed by using a method selected from the group consisting of the PVD, the CVD and the ALD.

10. The method as recited in claim 1 , wherein the step f) is carried out by using the CMP process.

11. The method as recited in claim 1 , wherein the step f) is carried out by using an etchback process.

12. The method as recited in claim 1 , wherein the step f) is carried out by using an etchback process after carrying out the CMP process.

13. The method as recited in claim 1 , wherein the second ILD uses a material selected from the group consisting of PSG, SOG and USG.

14. The method as recited in claim 13 , wherein the step e) includes the steps of:

e1) forming a first layer on the top face of the first ILD and side walls of the capacitor stack for preventing oxygen diffusion; and

e2) forming a second layer on the first ILD.

15. The method as recited in claim 14 , wherein the first layer uses a material selected from the group consisting of TiO 2 , TEOS and Al 2 O 3 and the second layer uses a material selected from the group consisting of PSG, SOG and USG.

16. The method as recited in claim 1 , after the step e) further comprising the step of carrying out a curing process for removing moisture in the second ILD and densifying the second ILD.

17. The method as recited in claim 16 , wherein the curing process is carried out in an ambient of gas selected from the group consisting of oxygen (O 2 ), nitrogen (N 2 ) and argon for about ten minutes to about 2 hours at a temperature below about 550° C.

18. The method as recited in claim 1 , wherein the step g) is carried out by using a wet etching process.

19. The method as recited in claim 18 , wherein the wet etching process is carried out by using a mixed solution of which NH 4 OH, H 2 O 2 and H 2 O are mixed in a ratio of about 1 to about 4 to about 20.

20. The method as recited in claim 1 , wherein the step g) is carried out by using a dry etching process.

21. The method as recited in claim 20 , wherein the dry etching process is carried out by using a mixed gas of argon (Ar) and chlorine (Cl 2 ).

22. The method as recited in claim 1 , before the step h), further comprising the step of forming a second glue layer between the second ILD and the third conductive layer.

23. The method as recited in claim 22 , wherein the second glue layer uses Al 2 O 3 .

24. The method as recited in claim 22 , wherein the step of forming the second glue layer is carried out by using a method selected from the group consisting of the ALD, the CVD and the PVD.

25. The method as recited in claim 22 , wherein the second glue layer has the thickness in the range of about 5 Å to about 50 Å.

26. The method as recited in claim 1 , wherein the first conductive layer is formed with the thickness in the range of about 100 Å to 1,000 Å by using a method selected from the group consisting of the CVD, the PVD, the ALD and a PEALD.

27. The method as recited in claim 26 , wherein the first conductive layer employs a material selected from the group consisting of Pt, Ir, Ru, Re, Rh and a combination thereof.

28. The method as recited in claim 1 , wherein the dielectric layer is formed with the thickness in the range of about 50 Å to about 2,000 Å by using a method selected from the group consisting of a spin-on coating, the PVD, the CVD and the ALD.

29. The method as recited in claim 28 , wherein the dielectric layer uses a ferroelectric material selected from the group consisting of BLT, SBT, SBTN and PZT.

30. The method as recited in claim 1 , wherein the second conductive layer is formed with the thickness in the range of about 100 Å to about 1,000 Å by using a method selected from the group consisting of the CVD, the PVD, the ALD and the PEALD.

31. The method as recited in claim 30 , wherein the second conductive layer uses a material selected from the group consisting of Pt, Ir, Ru, IrO 2 , RuO 2 , Pt/IrO 2 , Pt/IrO 2 /Ir, IrO 2 /Ir, RuO 2 /Ru, Pt/RuO 2 /Ru and Pt/RuO 2 .

32. The method as recited in claim 1 , wherein the third conductive layer is formed with the thickness in the range of about 500 Å to about 3,000 Å by using a method selected from the group consisting of the PVD, the CVD and the ALD.