IP Library Granted Patent US 7,245,519
Granted Patent B2
US 7,245,519 · App. 11/209,117 · Granted Jul 17, 2007

Digitally programmable capacitor array

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,245,519
App. No.
11/209,117
Granted
Jul 17, 2007
Kind
B2
Abstract

A programmable capacitor array does not require separate switching transistors because the capacitors themselves have a switchable capacitance, which capacitors are made in the manner of regular N channel transistors with their source/drains connected to each other. When a logic low is applied to the gate, the capacitance is relatively low and the capacitance is what is commonly called parasitic capacitance. The capacitance increases significantly when a logic high is applied to the gate because the logic high has the effect of inverting the channel. Thus, the capacitor array is made of transistors that themselves have switchable capacitance operated so that no separate switching transistors are required. This allows for construction of an array of unit capacitors to achieve monotonic operation and good linearity using conventional manufacturing of N channel transistors while achieving significant area savings and reduced power consumption.

Claims (26)

1. A digitally programmable capacitor array comprising:

an array of digitally selectable transistors configured as a plurality of binary weighted capacitors, wherein each of the digitally selectable transistors of the array has a first state and a second state selected by an input coupled to a gate electrode of each of the digitally selectable transistors of the array, wherein each of the digitally selectable transistors of the array having a low capacitance or a high capacitance based on whether a respective transistor is in the first state or the second state.

2. The digitally programmable capacitor array of claim 1 , wherein the first state corresponds to the respective transistor being in an accumulation mode.

3. The digitally programmable capacitor array of claim 1 , wherein the second state corresponds to the respective transistor being in a strong inversion mode.

4. The digitally programmable capacitor array of claim 1 , wherein the low capacitance relates to at least a parasitic capacitance of the respective transistor.

5. The digitally programmable capacitor array of claim 1 , wherein the high capacitance relates to at least a combination of a parasitic capacitance of the respective transistor and a channel to gate capacitance of the respective transistor.

6. The digitally programmable capacitor array of claim 1 , wherein each of the array of digitally selectable transistors is an N channel transistor.

7. The digitally programmable capacitor array of claim 1 , wherein each of the array of digitally selectable transistors is a P channel transistor.

8. The digitally programmable capacitor array of claim 1 further comprising at least one transistor configured as a fixed capacitor coupled in parallel with the array of digitally selectable transistors.

9. A digitally programmable oscillator comprising:

a first digitally programmable capacitor array comprising a first array of digitally selectable transistors, wherein the first array of digitally selectable transistors is configured as a first plurality of binary weighted capacitors, wherein each of the digitally selectable transistors of the first array has a first state and a second state selected by an input coupled to a gate electrode of each of the digitally selectable transistors of the first array, wherein each of the digitally selectable transistors of the first array having a low capacitance or a high capacitance based on whether a respective transistor is in the first state or the second state;

a second digitally programmable capacitor array comprising a second array of digitally selectable transistors, wherein the second array of digitally selectable transistors is configured as a second plurality of binary weighted capacitors, wherein each of the digitally selectable transistors of the second array has a first state and a second state selected by an input coupled to a gate electrode of each of the digitally selectable transistors of the second array, wherein each of the digitally selectable transistors of the second array having a low capacitance or a high capacitance based on whether a respective transistor is in the first state or the second state; and

a current source for generating a reference current, wherein the reference current is supplied to the first digitally programmable capacitor array to generate a first input to a comparison circuit, and wherein the reference current is supplied to the second digitally programmable capacitor array to generate a second input to the comparison circuit, and wherein the comparison circuit generates a clock signal and a complementary clock signal, and wherein the clock signal is fed back to the first input to the comparison circuit and the complementary clock signal is fed back to the second input to the comparison circuit.

10. The digitally programmable oscillator of claim 9 , wherein the first state corresponds to the respective transistor being in an accumulation mode.

11. The digitally programmable oscillator of claim 9 , wherein the second state corresponds to the respective transistor being in a strong inversion mode.

12. The digitally programmable oscillator of claim 9 , wherein the low capacitance relates to at least a parasitic capacitance of the respective transistor.

13. The digitally programmable oscillator of claim 9 , wherein the high capacitance relates to at least a combination of a parasitic capacitance of the respective transistor and a channel to gate capacitance of the respective transistor.

14. The digitally programmable oscillator of claim 9 , wherein each of the array of digitally selectable transistors is an N channel transistor.

15. The digitally programmable oscillator of claim 9 , wherein each of the array of digitally selectable transistors is a P channel transistor.

16. The digitally programmable oscillator of claim 9 further comprising at least one transistor configured as a fixed capacitor coupled in parallel with the array of digitally selectable transistors.

17. A digitally programmable timer comprising:

an array of digitally selectable transistors configured as a plurality of binary weighted capacitors, wherein each of the digitally selectable transistors of the array has a first state and a second state selected by an input coupled to a gate electrode of each of the digitally selectable transistors of the array, wherein each of the digitally selectable transistors of the array having a low capacitance or a high capacitance based on whether a respective transistor is in the first state or the second state;

a current source for providing a reference current; and

a timing circuit coupled to the array of digitally selectable transistors to receive a voltage across the digitally selectable array of transistors as an input, wherein the reference current charges the array of digitally selectable transistors, such that the timing circuit produces an output signal with a delay dependent on at least a capacitance of the array of digitally selectable transistors.

18. The digitally programmable timer of claim 17 , wherein the low capacitance relates to at least a parasitic capacitance of the respective transistor.

19. The digitally programmable timer of claim 17 , wherein the high capacitance relates to at least a combination of a parasitic capacitance of the respective transistor and a channel to gate capacitance of the respective transistor.

Assignments (18)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE LISTED CHANGE OF NAME SHOULD BE MERGER AND CHANGE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0180. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 12, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 041354/0148 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040652/0180 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0704 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →