Semiconductor device with magnetically permeable heat sink
View Patent ↗A semiconductor device is attached to a heat sink by glue that is both thermally conductive and magnetically permeable. The glue fills different features in the surface of the semiconductor device so that there is good coupling between the semiconductor device and the heat sink. The glue is filled with magnetic particles so that the glue is magnetically permeable. The semiconductor device is formed with the heat sink at the wafer level and then singulated after attachment of the heat sink with the glue.
1. A method of making a semiconductor device comprising: providing an integrated circuit bearing structure with a first surface; selecting a substrate structure material having a first characteristic, the
first characteristic being at least one of the group consisting of thermally conductive, electrically conductive and magnetically permeable;
providing a substrate structure comprised of the selected substrate structure material, the substrate structure having a second surface; providing a glue having the first characteristic; and
gluing the integrated circuit bearing structure to the substrate structure using the glue.
2. The method of claim 1 wherein the step of providing the glue comprises:
providing a bonding agent; and
providing an amount of first characteristic enhancing agent; and mixing the bonding agent and the first characteristic enhancing agent.
3. The method of claim 1 wherein the step of gluing the integrated circuit bearing structure to the substrate structure comprises:
depositing the glue on at least one of the first and second surfaces;
placing the first and second surfaces in proximity with each other such that the glue extends between the first and second surfaces; and
curing the glue to bond the integrated circuit bearing structure to the substrate structure.
4. The method of claim 1 wherein the integrated circuit bearing structure is a wafer, the method comprising:
singulating a plurality of integrated circuits from the wafer, each of the integrated circuits comprising a portion of the wafer, the substrate and the glue.
5. The method of claim 1 further comprising:
selecting the substrate structure material to have a second characteristic, the second characteristic being another one of the group consisting of thermally conductive, electrically conductive and magnetically permeable.
6. The method of claim 1 wherein the integrated circuit bearing structure is a first integrated circuit bearing structure, the method further comprising:
providing a second integrated circuit bearing structure;
connecting the second integrated circuit bearing structure to the first integrated circuit bearing structure.
7. The method of claim 2 wherein the bonding agent is provided in liquid form and the first characteristic enhancing agent is provided in particulate form, and wherein the bonding agent and the first characteristic enhancing agent are mixed to provide a colloidal glue such that particles of the first characteristic enhancing agent are dispersed within a substantially continuous medium of the bonding agent.
8. A method of making a colloidal glue comprising:
selecting a characteristic from the group of thermally conductive, electrically conductive, and magnetically permeable; providing a glue having the selected characteristic; and
bonding an integrated circuit layer to a substrate layer using the glue haying the selected characteristic.
9. The method of claim 8 further comprising: thinning the integrated circuit layer after bonding.
10. The method of claim 8 further comprising: providing the substrate layer with the selected characteristic.
11. The method of claim 8 wherein the providing the glue comprises:
providing a base adhesive agent; and
adding a characteristic agent to the base adhesive to provide a glue having the selected characteristic in colloidal suspension.