Metal oxide semiconductor transistor and method for manufacturing the same
View Patent ↗A metal oxide semiconductor (MOS) transistor includes a source region having at least one source contact; a drain region having at least one drain contact; and a gate provided between the source region and the drain region, wherein the number of source contacts included in the source region is different from the number of drain contacts included in the source region.
1. A metal oxide semiconductor (MOS) transistor, comprising:
a source region having at least one source contact;
a drain region having at least one drain contact; and
a gate provided between the source region and the drain region,
wherein the number of source contacts included in the source region is different from the number of drain contacts included in the source region, the number of the source contacts being determined based on a relation between a saturation current variation caused by a temperature variation and the number of the source contacts.
2. The MOS transistor as recited in claim 1 , wherein the source region is provided with a given number of the source contacts to increase a source contact resistance.
3. The MOS transistor as recited in claim 2 , wherein the number of the source contacts is smaller than the number of the drain contacts.
4. The MOS transistor as recited in claim 3 , wherein a ratio of width to length of the MOS transistor is determined to compensate the increased source contact resistance.
5. The MOS transistor as recited in claim 1 , wherein the saturation current variation is decreased as the number of the source contacts is decreased.
6. A constant voltage generation circuit, comprising: a first MOS transistor for receiving a power supply voltage; a second MOS transistor for receiving the power supply voltage, a gate of the second MOS transistor being coupled to a gate of the first MOS transistor; a third MOS transistor provided between the first MOS transistor and a ground; and a fourth MOS transistor provided between the second MOS transistor and the ground, a gate of the third MOS transistor being coupled to a gate of the fourth MOS transistor, wherein each MOS transistor includes a source region having at least one source contact, a drain region having at least one drain contact and a gate, the number of source contacts included in the source region being different from the number of drain contacts included in the drain region and the number of the source contacts being determined based on a relation between a saturation current variation caused by a temperture variation and the number of source contacts.
7. The constant voltage generation circuit as recited in claim 6 , wherein the source region is provided with a number of the source contacts to increase a source contact resistance.
8. The constant voltage generation circuit as recited in claim 7 , wherein the number of the source contacts is smaller than the number of the drain contacts.
9. The constant voltage generation circuit as recited in claim 8 , wherein each MOS transistor has width and length, the length corresponding to a distance between the source region and the drain region and the width corresponding to length of a tangent line between the gate and the source region or the drain region.
10. The constant voltage generation circuit as recited in claim 9 , wherein a ratio of the width to the length is determined to compensate the increased source contact resistance.
11. The constant voltage generation circuit as recited in claim 6 , wherein the number of the source contacts is selected based on a relation between a saturation current variation caused by a temperature variation and the number of the source contacts.
12. The constant voltage generation circuit as recited in claim 11 , wherein the saturation current variation is decreased as the number of the source contacts is decreased.