Semiconductor device and method for manufacturing the same
View Patent ↗A method for manufacturing semiconductor device employs an EXTIGATE structure. In accordance with the method, a predetermined thickness of the device isolation film is etched to form a recess. The recess is then filled with a second nitride film. A stacked structure of a barrier metal film, a metal layer and a third nitride film on the second nitride film and the polysilicon film are formed on the entire surface and the etched via a photoetching process to form a gate electrode. An insulating film spacer is deposited on a sidewall of the gate electrode. The exposed portion of the polysilicon film uses the third nitride film pattern and the insulating film spacer as a mask to form a polysilicon film pattern and an oxide film on a sidewall of the polysilicon film pattern.
1. A semiconductor device including a device isolation film defining an active region, the device comprising:
a first gate electrode formed over the active region, the first gate electrode including a first stacked structure consisting only of a polysilicon film over the active region, a first barrier metal film over the polysilicon film, a first metal layer over the first barrier film, and a first nitride film over the first metal film; and
a second gate electrode formed over the device isolation film, the second gate electrode including a second stacked structure consisting only of a second nitride film over the device isolation film, a second barrier metal film over the second nitride film, a second metal layer over the second barrier metal film, and a third nitride film over the second metal layer.
2. The semiconductor device according to claim 1 , wherein the first and second barrier metal films each comprise a metal selected from the group consisting of tungsten nitride, titanium nitride, and titanium silicon nitride, and the first and second metal layers each comprise a metal selected from the group consisting of tungsten, titanium silicide, tungsten silicide, and cobalt silicide.