Method and apparatus for protecting RF power amplifiers
View Patent ↗Method and apparatus are provided for protecting radio frequency (RF) power amplifiers. A circuit ( 10 ) is provided for limiting a supply current to a first stage (Q 3 ) of the RF power amplifier having a second stage (Q 2 ) coupled to the first stage. The circuit comprises a comparator ( 14 ) having first and second inputs and an output, and a switching circuit ( 12, 20, 22, 24 ) having an input coupled to the output of the comparator ( 14 ) and having an output configured to couple to the first stage (Q 3 ). The first input of the comparator ( 14 ) is configured to receive the supply current, and the second input is configured to receive a current supplied to the second stage (Q 2 ). The comparator ( 14 ) is configured to compare a ratio of the supply current to the first stage to the current supplied to the second stage (Q 2 ) with a predetermined value. The switching circuit ( 12, 20, 22, 24 ) is configured to limit the supply current to the first stage (Q 3 ) when the ratio exceeds the predetermined value.
1. A circuit for limiting a supply current to a first stage of a Radio Frequency (RF) power amplifier having a second stage coupled to the first stage, the circuit comprising:
a comparator having first and second inputs and an output, said first input configured to receive the supply current, said second input configured to receive a current supplied to the second stage, said comparator configured to compare a ratio of the supply current to the first stage to said current supplied to the second stage with a predetermined value; and
a switching circuit having an input coupled to said output of said comparator and having an output configured to couple to the first stage, said switching circuit configured to limit the supply current to the first stage when said ratio exceeds said predetermined value.
2. A circuit according to claim 1 , wherein said switching circuit comprises:
a first transistor having a gate coupled to said output of said comparator, a drain terminal, and a source terminal coupled to a reference potential;
a second transistor having a base coupled to the first stage, a collector coupled to said drain terminal of said first transistor, and an emitter coupled to said reference potential;
a third transistor having a base coupled to said drain terminal of said first transistor and said collector of said second transistor, a collector coupled to said first input of said comparator, and an emitter coupled to the first stage and said base of said second transistor; and
a current source coupled to said drain terminal of said first transistor, said collector of said second transistor, and said base of said third transistor.
3. A circuit according to claim 1 farther comprising:
a biasing circuit having an input coupled to said second input of said comparator and having an output coupled to the second stage, said biasing circuit configured to regulate said current supplied to the second stage.
4. A circuit according to claim 3 farther comprising a current source having an input coupled to said input of said biasing circuit and said second input of said comparator, said current source configured to offset said current supplied to the second stage by a predetermined offset current.
5. A circuit according to claim 1 , wherein the supply current to the first stage is sensed by a first resistance, said current supplied to the second stage is sensed by a second resistance, and said predetermined value comprises a ratio of said first resistance to said second resistance.
6. A circuit according to claim 4 further comprising:
a first resistor having a first terminal coupled to said first input of said comparator and a second terminal configured to couple to a reference potential; and
a second resistor having a first terminal coupled to said second input of said comparator and having a second terminal configured to couple to the reference potential.
7. A Radio Frequency (RF) power amplifier comprising:
a first stage having an input configured to receive a first current and having an output configured to transmit an amplified signal based on said first current;
a second stage coupled to said input of said first stage and configured to receive a second current; and
a comparator circuit having a first input configured to receive a first signal indicating said first current, a second input configured to receive a second signal indicating said second current, and an output coupled to said first stage, said comparator circuit configured to:
compare a ratio of said first current to said second current with a predetermined value; and
limit said first current when said ratio exceeds said predetermined value.
8. An RF power amplifier according to claim 7 , wherein said comparator circuit comprises:
an operational amplifier (OPAMP) having a first input configured to receive a first potential based on said first current, a second input configured to receive a second potential based on said second current, and an output;
a switching transistor having a gate coupled to said output of said OPAMP and having a source terminal and a drain terminal; and
a biasing circuit having a first input coupled to said drain terminal of said switching transistor, a second input coupled to said first input of said OPAMP, and an output coupled to said input of said first stage, said biasing circuit configured to regulate said first current to said first stage, said switching transistor configured to control said biasing circuit to limit said first current when said ratio exceeds said predetermined value.
9. An RF power amplifier according to claim 8 , wherein said biasing circuit comprises:
a current source configured to supply a reference current for regulating said first current to said first stage;
a first transistor having a base coupled to the first stage, a collector coupled to said drain terminal of said switching transistor and said current source, and an emitter coupled to said reference potential; and
a second transistor having a base coupled to said drain terminal of said switching transistor, said collector of said first transistor, and said current source, a collector coupled to said first input of said comparator, and an emitter coupled to the first stage and said base of said first transistor.
10. An RF power amplifier according to claim 7 , wherein said second stage comprises:
a biasing circuit having an input coupled to said second input of said comparator circuit and having an output; and
a first transistor having a base coupled to said output of said biasing circuit and having a collector coupled to said input of said first stage.
11. An RF power amplifier according to claim 10 , wherein said biasing circuit comprises:
a current source configured to supply a reference current for regulating said second current to said second stage;
a second transistor having a base coupled to said current source, a collector coupled to said second input of said comparator circuit, and an emitter coupled to said collector of said first transistor; and
a third transistor having a base coupled to said emitter of said second transistor and said base of said first transistor, a collector coupled to said current source, and an emitter configured to couple to a reference potential.
12. An RF power amplifier according to claim 10 further comprising an offset current source having an input coupled to said second input of said comparator circuit and said input of said biasing circuit, said offset current source configured to output a third current.
13. An RF power amplifier according to claim 7 further comprising:
a first resistance having a first terminal coupled to said first input of said comparator circuit and having a second terminal configured to couple to a reference potential; and
a second resistance having a first terminal coupled to said second input of said comparator circuit and having a second terminal configured to couple to said reference potential; and
wherein said predetermined value comprises a ratio of said first resistance to said second resistance.
14. An RF power amplifier according to claim 13 , wherein said second stage comprises:
a biasing circuit having an input coupled to said second input of said comparator circuit; and
an offset current source having an input coupled to said input of said biasing circuit, said offset current source configured to produce an offset current; and
wherein said second current is modified by said offset current.
15. A method for protecting a radio frequency (RF) power amplifier, the method comprising the steps of:
comparing a ratio of a first current of a first stage in the RF power amplifier to a second current of a second stage in the RF power amplifier, the second stage coupled to the first stage; and
limiting the first current when the ratio exceeds a predetermined value.
16. A method according to claim 15 further comprising the step of biasing the second stage with a bias current prior to said determining step, the second current of the second stage based on the bias current.
17. A method according to claim 15 further comprises the step of offsetting the second current to the second stage by a predetermined current.
18. A method according to claim 15 further comprising the steps of:
sensing the first current to the first stage across a first resistance; and
sensing the second current to the second stage across a second resistance; and
wherein the predetermined value comprises a ratio of the first resistance to the second resistance.
19. A method according to claim 15 further comprising the step of biasing the first stage with a bias current prior to said determining step, the first current of the first stage based on the bias current.
20. A method according to claim 19 , wherein said limiting step comprises diverting at least a portion of the bias current.