IP Library Granted Patent US 7,434,195
Granted Patent B2
US 7,434,195 · App. 11/225,888 · Granted Oct 7, 2008

Method for performing full-chip manufacturing reliability checking and correction

Assignee: ASML Masktools B.V.
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Quick Facts
Patent No.
US 7,434,195
App. No.
11/225,888
Granted
Oct 7, 2008
Kind
B2
Abstract

A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.

Claims (35)

1. A method of generating a mask for use in an imaging process, said method comprising the steps of:

(a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate;

(b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process so as to generate simulated imaging results;

(c) defining a plurality of feature categories;

(d) identifying features in said target pattern having said plurality of features that correspond to at least one of said plurality of feature categories, determining errors between said simulated imaging results and said target pattern for said identified features, and recording an error value for each feature identified as corresponding to one of said plurality of feature categories; and

(e) generating a statistical summary for each of said plurality of feature categories, which indicates the error value for each feature identified as corresponding to a given feature category of said plurality of feature categories.

2. The method of claim 1 , wherein said error value represents a difference between a location of a feature in said target pattern and the location of the same feature in said simulated wafer image.

3. The method of claim 1 wherein each of the plurality of features in the target design are classified into at least one of said plurality of feature categories.

4. The method of claim 1 , further comprising the steps of:

(f) identifying an error tolerance for features corresponding to one of said plurality of feature categories; and

(g) determining whether any feature identified as corresponding to one of said plurality of feature categories has an error value which exceeds said error tolerance.

5. The method of claim 4 , further comprising the step of performing a corrective measure for any feature identified as having an error value which exceeds said error tolerance, said corrective measure operative to reduce the error value of the corresponding feature below said error tolerance.

6. A computer program product for controlling a computer comprising a recording medium readable by the computer, means recorded on the recording medium for directing the computer to generate files corresponding to a mask for use in a lithographic imaging process, the generation of the files comprising the steps of:

(a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate;

(b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process so as to generate simulated imaging results;

(c) defining a plurality of feature categories;

(d) identifying features in said target pattern having said plurality of features that correspond to at least one of said plurality of feature categories, determining errors between said simulated imaging results and said target pattern for said identified features, and recording an error value for each feature identified as corresponding to one of said plurality of feature categories; and

(e) generating a statistical summary for each of said plurality of feature categories, which indicates the error value for each feature identified as corresponding to a given feature category of said plurality of feature categories.

7. The computer program product of claim 6 , wherein said error value represents a difference between a location of a feature in said target pattern and the location of the same feature in said simulated wafer image.

8. The computer program product of claim 6 wherein each of the plurality of features in the target design are classified into at least one of said plurality of feature categories.

9. The computer program product of claim 6 , further comprising the steps of:

(f) identifying an error tolerance for features corresponding to one of said plurality of feature categories; and

(g) determining whether any feature identified as corresponding to one of said plurality of feature categories has an error value which exceeds said error tolerance.

10. The computer program product of claim 9 , further comprising the step of performing a corrective measure for any feature identified as having an error value which exceeds said error tolerance, said corrective measure operative to reduce the error value of the corresponding feature below said error tolerance.

11. A device manufacturing method comprising the steps of:

(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

(b) providing a projection beam of radiation using an imaging system;

(c) using a pattern on a mask to endow the projection beam with a pattern in its cross- section;

(d) projecting the patterned beam of radiation onto a. target portion of the layer of radiation-sensitive material,

wherein, in step (c), said mask is formed by a method comprising the steps of:

obtaining a desired target pattern having a plurality of features to be imaged on a substrate;

simulating a wafer image utilizing the target pattern and process parameters associated with a defined process so as to generate simulated imaging results;

defining a plurality of feature categories;

identifying features in said target pattern having said plurality of features that correspond to at least one of said plurality of feature categories, determining errors between said simulated imaging results and said target pattern for said identified features, and recording an error value for each feature identified as corresponding to one of said plurality of feature categories; and

generating a statistical summary for each of said plurality of feature categories, which indicates the error value for each feature identified as corresponding to a given feature category of said plurality of feature categories.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 7, 2014
From: ASML MASKTOOLS B.V.
To: ASML NETHERLANDS B.V.
Reel/Frame 032170/0425 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2005
From: HSU, MICHAEL; LAIDIG, THOMAS; WAMPLER, KURT E.; HSU, DUAN-GU STEPHEN; SHI, XUELONG; VAN DEN BROEKE, DOUGLAS; CHEN, JANG FUNG
To: ASML MASKTOOL
Reel/Frame 017387/0383 →
Continuity (2)
Provisional Application 6060924300 · Sep 14, 2004
Related Publication 20060080633A1 · Apr 13, 2006