A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface portion provided within the round portion in a range of 0.05 mm or more and 0.3 mm or less defined from an outer circumference vertical portion of the recess and a contact portion, where the susceptor contacts with the wafer on the recess, having a surface roughness Ra in a range of 0.5 μm or more and 3 μm or less.
1. A susceptor for use in growing semiconductor wafers, comprising:
a base which comprises
at least one surface, comprising a recess formed in the coated surface for mounting a wafer the recess comprising a generally flat floor region defining a contact portion for the wafer, an outer circumferential vertical portion, and a rounded transitional portion providing a transition between a lower portion of the outer circumferential vertical portion of the recess and the generally flat floor region of the recess;
a layer of SiC coating the surface and the recess; a second ring-shaped SiC crystal growth surface portion provided within the rounded transitional portion located at a distance within a range of 0.05 mm to 0.3 mm less defined from the outer circumference vertical portion of the recess and
wherein a surface roughness Ra in the contact portion, where the susceptor contacts the wafer is within on the recess, having a surface roughness Ra in a range of 0.5 μm 3 μm less.
2. The susceptor according to claim 1 , wherein an outer circumference planar portion extending from the outer circumferential vertical portion of the recess and at least partially or forming a surface of the susceptor has an irregularly shaped surface having an arithmetic average roughness Ra in a range of 0.05 μm to 0.5 μm.
3. The susceptor according to claim 2 , comprising five recesses, wherein the outer circumference planar portion occupies 70% or more of the surface of the susceptor excluding the recesses.
4. The susceptor according to claim 2 , comprising one recess, wherein the outer circumference planar portion covers the entire surface of the susceptor excluding the recesses.
5. The susceptor according to claim 1 , wherein the second ring-shaped SiC crystal growth layer comprises a non-polished surface portion.