Defectivity and process control of electroless deposition in microelectronics applications
View Patent ↗Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
1. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising a triethanolamine salt of lauryl sulfate.
2. The electroless deposition composition of claim 1 wherein the triethanolamine salt of lauryl sulfate is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm.
3. The electroless deposition composition of claim 1 further comprising an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO 3 2− , HSO 3 − , hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof.
4. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an ammonium laureth sulfate.
5. The electroless deposition composition of claim 4 wherein the ammonium laureth sulfate is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm.
6. The electroless deposition composition of claim 4 further comprising an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO 3 2− , HSO 3 − , hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof.
7. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an alkyldiphenyloxide disulfonate.
8. The electroless deposition composition of claim 7 wherein the alkyldiphenyloxide disulfonate is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm.
9. The electroless deposition composition of claim 7 wherein the leveler is diphenyl oxide disulfonic acid.
10. The electroless deposition composition of claim 7 further comprising an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO 3 2− , HSO 3 − , hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof.
11. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising a triethanolamine salt of lauryl sulfate.
12. The method of claim 11 wherein the leveler is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm.
13. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an ammonium laureth sulfate.
14. The method of claim 13 wherein the leveler is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm.
15. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an alkyldiphenyloxide disulfonate.
16. The method of claim 15 wherein the leveler is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm.
17. The method of claim 15 wherein the leveler is diphenyl oxide disulfonic acid.