Programmable fuse with silicon germanium
View Patent ↗A programmable fuse and method of formation utilizing a layer of silicon germanium (SiGe) (e.g. monocrystalline) as a thermal insulator to contain heat generated during programming. The programmable fuse, in some examples, may be devoid of any dielectric materials between a conductive layer and a substrate. In one example, the conductive layer serves as programmable material, that in a low impedance state, electrically couples conductive structures. A programming current is applied to the programmable material to modify the programmable material to place the fuse in a high impedance state.
1. A method for forming a programmable fuse comprising:
providing a wafer including a substrate of bulk semiconductor material;
forming a first contact structure overlying the substrate;
forming a second contact structure overlying the substrate;
wherein the first contact structure and the second contact structure are electrically coupled via programmable material located in an area of the wafer, the area of wafer including a layer of monocrystalline silicon germanium over the substrate;
wherein there is no intervening dielectric material between the layer of monocrystalline silicon germanium and the substrate.
2. The method of claim 1 further comprising:
forming a layer of monocrystalline silicon overlying the layer of monocrystalline silicon germanium, wherein the first contact structure and the second contact structure are formed over the layer of monocrystalline silicon.
3. The method of claim 1 wherein the programmable material includes conductive material formed from active material of the wafer.
4. The method of claim 1 further comprising:
patterning the programmable material, wherein the patterning includes patterning the layer of monocrystalline silicon germanium.
5. The method of claim 1 wherein the layer of monocrystalline silicon germanium includes monocrystalline silicon germanium carbon.
6. The method of claim 1 wherein the bulk semiconductor material includes silicon.
7. The method of claim 1 further comprising:
forming a layer of conductive material overlying the layer of monocrystalline silicon germanium of the area of the wafer, wherein the programmable material includes material of the layer of conductive material.
8. The method of claim 1 wherein the substrate has a conductivity of a first type and the layer of monocrystalline silicon germanium has a conductivity of a second type opposite the first type.
9. The method of claim 1 wherein the first contact structure and the second contact structure are formed over the layer of monocrystalline silicon germanium.
10. The method of claim 7 wherein the layer of conductive material includes silicide.
11. The method of claim 7 wherein the first contact structure and the second contact structure each electrically contact the layer of conductive material.
12. The method of claim 1 further comprising:
providing the layer of monocrystalline silicon germanium to have a first predetermined depth of the wafer; and
forming an isolation region of a second predetermined depth of the wafer adjacent peripheral edges of the layer of monocrystalline silicon germanium, the first predetermined depth being less than the second predetermined depth, wherein forming an isolation region includes etching through the layer of monocrystalline silicon germanium and etching into the substrate to the second predetermined depth.
13. A method for forming a programmable fuse comprising:
providing a wafer including a substrate of bulk semiconductor material;
forming a first contact structure overlying the substrate;
forming a second contact structure overlying the substrate;
wherein the first contact structure and the second contact structure are electrically coupled via programmable material located in an area of the wafer, the area of wafer including a layer of monocrystalline silicon germanium over the substrate;
providing the layer of monocrystalline silicon germanium to have a first predetermined depth of the wafer; and
forming an isolation region of a second predetermined depth of the wafer adjacent peripheral edges of the layer of monocrystalline silicon germanium, the first predetermined depth being less than the second predetermined depth, wherein forming an isolation region includes etching through the layer of monocrystalline silicon germanium and etching into the substrate to the second predetermined depth.
14. The method of claim 13 wherein the bulk semiconductor material includes silicon.
15. The method of claim 13 further comprising:
forming a layer of conductive material overlying the layer of monocrystalline silicon germanium of the area of the wafer, wherein the programmable material includes material of the layer of conductive material.
16. The method of claim 13 wherein the substrate has a conductivity of a first type and the layer of monocrystalline silicon germanium has a conductivity of a second type opposite the first type.
17. The method of claim 13 wherein the forming the layer of monocrystalline silicon germanium results in no intervening dielectric material between the layer of monocrystalline silicon germanium and the substrate.
18. The method of claim 13 wherein the first contact structure and the second contact structure are formed over the layer of monocrystalline silicon germanium.
19. The method of claim 13 further comprising forming a layer of monocrystalline silicon overlying the layer of monocrystalline silicon germanium, wherein the first contact structure and the second contact structure are formed over the layer of monocrystalline silicon.
20. The method of claim 15 wherein the layer of conductive material includes silicide and wherein the first contact structure and the second contact structure each electrically contact the layer of conductive material.
21. The method of claim 13 wherein the programmable material includes conductive material formed from active material of the wafer.
22. The method of claim 13 further comprising:
patterning the programmable material, wherein the patterning includes patterning the layer of monocrystalline silicon germanium.
23. The method of claim 13 wherein the layer of monocrystalline silicon germanium includes monocrystalline silicon germanium carbon.