Method for manufacturing synthetic silica glass substrate for photomask and synthetic silica glass substrate for photomask manufactured thereby
The invention provides a method for efficiently manufacturing a synthetic silica glass substrate for photomasks excellent in light stability and capable of being applied to ArF-Wet photolithography with maximum birefringence of 1.4 nm/cm or less, homogeneity of diffractive index of 2×10 −5 or less and an average content of hydrogen atoms of 10 18 to 10 19 , comprising the steps of: forming a mask-plain substrate by slicing a block of a synthetic silica glass; heating each sheet of the mask-plain substrate at a temperature of 1100° C. or more; slowly cooling the substrate at a cooling rate of 0.01 to 0.8° C./min; and placing the substrate in a hydrogen gas atmosphere at least at the latter half of the slow cooling step or after the slow cooling step.
1 . A method for manufacturing a synthetic silica glass substrate for photomasks comprising the steps of:
forming a mask-plain substrate by slicing a block of a synthetic silica glass;
heating each sheet of the mask-plain substrate at a temperature of 1100° C. or more;
slowly cooling the substrate at a cooling rate of 0.01 to 0.8° C./min; and
placing the substrate in a hydrogen gas atmosphere at least at the latter half of the slow cooling step or after the slow cooling step.
2 . The method for manufacturing the synthetic silica glass substrate for photomasks according to claim 1 , wherein the block of the synthetic silica glass has maximum birefringence of 10 to 15 nm/cm and homogeneity of the refractive index of 10 −5 or less, and does not emit fluorescence by irradiating with a low pressure mercury lamp.
3 . The method for manufacturing the synthetic silica glass substrate for photomasks according to claim 1 comprising the steps of:
decreasing the hydrogen concentration in the mask-plain substrate once by heating each sheet of the mask-plain substrate at a temperature of 1100° C. or more; and
increasing the hydrogen concentration again by treating in the hydrogen gas atmosphere at least at the latter half of the slow cooling step or after the slow cooling step.
4 . The method for manufacturing the synthetic silica glass substrate for photomasks according to claim 1 , wherein each sheet of the mask-plain substrate is covered with a silica base heat insulating material for heating the sheet.
5 . The method for manufacturing the synthetic silica glass substrate for photomasks according to claim 1 , wherein each sheet of the mask-plain substrate is placed on a tray made of any one of silicon, carbon or silicon carbide for heating the sheet of the synthetic silica glass substrate.
6 . The method for manufacturing the synthetic silica glass substrate for photomasks according to claim 1 , wherein the block of the synthetic silica glass is manufactured by a direct melting method with an OH group concentration of 600 to 1000 ppm.
7 . The method for manufacturing the synthetic silica glass substrate for photomasks according to claim 1 , wherein the block of the synthetic silica glass is slowly cooled at a cooling rate of 0.8 to 1° C./min after heating at a temperature of 1100° C. or more in air.
8 . A synthetic silica glass substrate for photomasks manufactured by the manufacturing method according to claim 1 .
9 . The synthetic silica glass substrate for photomasks according to claim 8 having maximum birefringence of 1.4 nm/cm or less and homogeneity of diffractive index of 2×10 −5 or less.
10 . The synthetic silica glass substrate for photomasks according to claim 8 having an average concentration of hydrogen atoms of 10 18 to 10 19 ppm.