Plasma-based EUV light source
Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.
1. A method for producing extreme ultraviolet (EUV) light, comprising:
providing a plasma;
accelerating the plasma to produce a sheared plasma flow;
forming a plasma pinch from the accelerated plasma; and
sustaining the plasma pinch for a period of time so as to allow the plasma to emit EUV light during at least a portion of said period of time.
2. The method according to claim 1 , further comprising replacing the plasma after the plasma pinch has been sustained and providing a new plasma used in EUV light emission.
3. The method according to claim 1 , wherein the plasma is accelerated at a rate to satisfy a stability threshold.
4. The method according to claim 1 , wherein the plasma comprises Xenon.
5. The method according to claim 1 , wherein the plasma comprises Tin.
6. The method according to claim 1 , wherein the plasma comprises Lithium.
7. The method according to claim 1 , wherein the plasma comprises ionizable gas configured to emit EUV light.
8. The method according to claim 1 , further comprising applying a voltage in the range of about 5 kV to 9 kV to the plasma before it is accelerated.
9. The method according to claim 1 , wherein the period of time is at least one of (a) about 20 microseconds to 40 microseconds and (b) at least 40 microseconds.
10. The method according to claim 1 , wherein the plasma pinch is formed at a rate of about 1 kilohertz.
11. The method according to claim 1 , wherein the plasma pinch is formed at a rate of about 10 to 100 hertz.
12. The method according to claim 1 , wherein the plasma pinch produces at least 100 watts of EUV power at an intermediate focus.
13. The method according to claim 1 , wherein the EUV light has a wavelength in the range of about 10 to 17 nanometers.
14. An apparatus for producing extreme ultraviolet (EUV) light, comprising:
a first electrode;
a second electrode, wherein the second electrode is configured coaxially with respect to the first electrode, such that a pinch is formed between one end of the first electrode and an adjacent region of second electrode, wherein the pinch is configured to receive a sheared flow of a plasma;
an injection port configured for injection of at least one of (a) gas and (b) plasma into a region formed between the first electrode and the second electrode; and
an access port configured for providing access to EUV light emanating from the plasma formed in the pinch.
15. The apparatus according to claim 14 , wherein one of the first electrode comprises one of (a) a cathode and (b) an anode.
16. The apparatus according to claim 14 , wherein the first electrode is substantially curved along one end, thereby permitting a smooth transition of the plasma from the region to the pinch.
17. The apparatus according to claim 14 , wherein the second electrode comprises one of (a) a cathode and (b) an anode.
18. An lithography system for producing extreme ultraviolet (EUV) light, comprising:
a plasma source for emitting EUV light, wherein the plasma source generates the EUV light using sheared flow stabilized plasma;
a mask, wherein the plasma source is directed at the mask; and
a focusing apparatus for controlling the EUV light emanating from the plasma source and passing through at least one aperture of the mask.
19. The system according to claim 18 , wherein the focusing apparatus comprises a reflective optic configured to point the EUV light at a substrate.
20. The system according to claim 18 , wherein at least part of the system is encapsulated in a vacuum.