Printing of design features using alternating PSM technology with double mask exposure strategy
View Patent ↗For cases where one edge of a design feature is to be printed through a shifter mask and another one is to be printed through a binary trim mask, and where no upsizing can be performed due to the local density of the design, it is proposed to add shifters with respect to the shifter mask in such a way that all the edges are printed by the phase shift mask.
1. A method for printing design features within a photosensitive material using alternating Phase Shift Mask technology based on a double mask exposure strategy, comprising the steps of:
determining at least first, second and third design features adjacent one to the other, of which said first design feature has critical dimensions whereas said second and third design features do not have critical dimensions;
defining a phase shift mask and an associated binary trim mask, such that opposite edges of said first design feature are to be defined by the phase shift mask, that a first edge of said second design feature is to be defined by the phase shift mask while a second opposite edge thereof is to be defined by the binary trim mask, and that all edges of said third design feature are to be defined by the binary trim mask;
determining that said second design feature cannot be subject to an upsizing effect due to its proximity with said third design feature; and, as a result,
modifying the phase shift mask definition and the associated binary trim mask definition, so that said phase shift mask becomes suitable for defining said opposite edges of said first design feature along with said first and second opposite edges of said second design feature, and for defining one edge of said third design feature, whereas said binary trim mask becomes suitable for defining another opposite edge of said third design feature with upsizing thereof; and
fabricating the phase shift mask and the binary trim mask over a resist layer, in accordance with their respective definition thus modified, and lighting the resist layer through the phase shift mask and then through the binary trim mask.
2. The method according to claim 1 wherein the binary trim mask is designed to define dummy patterns as well, and wherein the localization of said dummy patterns takes into account, among other characteristics, the position and the dimensions of the upsized design features.
3. A method of fabricating a mask set comprising a phase shift mask and an associated binary trim mask, intended for printing design features within a photosensitive material using alternating Phase Shift Mask technology based on a double mask exposure strategy, comprising the steps of:
determining at least first, second and third design features adjacent one to the other, of which said first design feature has critical dimensions whereas said second and third design features do not have critical dimensions;
defining the phase shift mask and the binary trim mask, such that opposite edges of said first design feature are to be defined by the phase shift mask, that a first edge of said second design feature is to be defined by the phase shift mask while a second opposite edge thereof is to be defined by the binary trim mask, and that all edges of said third design features are to be defined by the binary trim mask;
determining that said second design feature cannot be subject to an upsizing effect due to its proximity with said third design feature; and, as a result,
modifying the phase shift mask definition and the associated binary trim mask definition, so that said phase shift mask become suitable for defining said opposite edges of said first design feature along with said first and second opposite edges of said second design feature, and for defining one edge of said third design feature, whereas said binary trim mask become suitable for defining another opposite edge of said third design feature with upsizing thereof; and
fabricating the phase shift mask and the binary trim mask in accordance with their respective definition thus modified.
4. The method according to claim 3 wherein the binary trim mask is designed to define dummy patterns as well, and wherein the localization of said dummy patterns takes into account, among other characteristics, the position and the dimensions of the upsized design features.
5. A method, comprising the steps of:
identifying first, second and third design features which are proximately located to one another, wherein the first design feature has critical dimensions, and the second and third design features do not have critical dimensions, but wherein at least a first portion of the second design feature cannot be subject to an upsizing effect due to its proximity to the third design feature; and
defining a phase shift mask and an associated binary trim mask, such that opposite edges of the first design feature along with certain opposite edges of the second design feature associated with the first portion not to be upsized and at least a portion of one edge of the third design feature are to be defined by the phase shift mask, and further such that remaining edges of the third design feature, including an edge opposite the portion of the one edge, along with edges of the second design feature associated with a second portion that may be subject to an upsizing effect are to be defined by the binary trim mask.
6. The method of claim 5 further comprising:
fabricating the phase shift mask and the binary trim mask over a resist layer; and
lighting the resist layer through the phase shift mask and then through the binary trim mask.
7. The method of claim 5 , further comprising:
identifying dummy patterns; and
defining the binary trim mask to include the dummy patterns as well.
8. The method of claim 7 , wherein a localization of the dummy patterns takes into account at least a position and dimensions of the design features which may be subject to an upsizing effect.
9. A method, comprising the steps of:
providing a phase shift mask for first, second and third design features which are proximately located to one another, the phase shift mask defining opposite edges of the first design feature, opposite edges of the second design feature located adjacent the first design feature, and a first edge of the third design feature located adjacent the second design feature;
providing an associated binary trim mask for the first, second and third design, the binary trim mask protecting the first, second and third design features, and the binary mask further defining a second edge of the third design feature which is opposite the first edge of the third design feature, wherein the second edge of the third design feature may be subject to an upsizing effect;
lighting a resist layer first through the phase shift mask and then through the binary trim mask.
10. The method of claim 9 wherein the opposite edges of the second design feature cannot be subject to an upsizing effect due to proximity of the second design feature to the first and third design features.
11. The method of claim 10 wherein the first edge of the third design feature cannot be subject to an upsizing effect due to proximity of the third design feature to the second design feature.
12. The method of claim 9 wherein the binary trim mask further defines dummy patterns whose position in the mask takes into account at least the position of the second edge of the third design feature which may be subject to an upsizing effect.