Semiconductor device and method of fabricating the same
Slit-like gap regions are provided at sides of a bonding pad that surrounds a window for bonding. The bonding pad is divided into a region at the side of the window and another region at the side of an adjoining interconnection layer in which the gap regions are the boundaries between these regions. The region provided at the side of the wiring layer is spaced apart from the region at the side of the bonding window by the width of the associated gap region. The gap regions are filled with a passivation film that is soft as compared with Top-side. Thermal stress is absorbed and distributed by the gap regions, and diffusion of metal atoms from the region at the side of the window to the region at the side of the interconnection layer is reduced.
1 . A semiconductor device comprising:
a bonding pad; and
an interconnection line close to the bonding pad;
the bonding pad having a gap region that is provided in a region proximate to the interconnection line and runs in a direction substantially identical to a direction in which an edge of the bonding pad facing the interconnection line extends.
2 . The semiconductor device as claimed in claim 1 , wherein the bonding pad has at least three gap regions that are provided in the region proximate to the interconnection line and are arranged into lines.
3 . The semiconductor device as claimed in claim 1 , further comprising a single protection film that covers the interconnection line and a part of the bonding pad, wherein the gap region located in the part of the bonding part is filled with a part of the protection film.
4 . The semiconductor device as claimed in claim 2 , wherein the bonding pad has a window provided in an inner region thereof and used to bond a wire and at least one of the at least three gap regions is provided in the window.
5 . The semiconductor device as claimed in claim 3 , wherein the protection film is a multilayer film having a first relatively soft insulating film and a second relatively hard insulating film, and the part of the protection film provided in the gap region comprises a portion of the first insulating film.
6 . The semiconductor device as claimed in claim 5 , wherein the first insulating film is an SOG film, and the second insulating film is a silicon nitride film.
7 . The semiconductor device as claimed in claim 1 , further comprising sidewalls on sidewalls of the bonding pads that surround the gap region.
8 . The semiconductor device as claimed in claim 7 , wherein the sidewalls are made of titanium or an alloy containing titanium.
9 . The semiconductor device as claimed in claim 1 , further comprising a silicon oxide film that covers a buried interconnection pattern, wherein the bonding pad and the interconnection line are provided on the silicon oxide film.
10 . A method of fabricating a semiconductor device comprising:
providing a conductive layer on an insulating layer; and
patterning the conductive layer into a bonding pad and an interconnection line close to the bonding pad so that that the bonding pad has a gap region that is provided in a region proximate to the interconnection line and runs in a direction substantially identical to a direction in which an edge of the bonding pad facing the interconnection line extends.
11 . The method as claimed in claim 10 , further comprising forming a window provided in an inner region of the bonding pad and used to bond a wire.
12 . A method of fabricating a semiconductor device comprising:
forming a buried interconnection pattern covered by an insulating layer;
providing a conductive layer on the insulating layer; and
patterning the conductive layer into a bonding pad and an interconnection line close to the bonding pad so that that the bonding pad has a gap region that is provided in a region proximate to the interconnection line and runs in a direction substantially identical to a direction in which an edge of the bonding pad facing the interconnection line extends.