Semiconductor integrated device for preventing breakdown and degradation of a gate oxide film caused by charge-up in manufacturing steps thereof, design method thereof, designing apparatus method thereof, and maunfacturing apparatus thereof
View Patent ↗Semiconductor integrated circuit that prevents breakdown and degradation of a gate oxide film caused by charge-up in manufacturing steps thereof is provided. The circuit includes a gate 12 provided insulated from a transistor diffusion layer 11 , wirings 13 and 14 connected to the gate 12 , a wiring 15 parallel to and adjacent to the wiring 13 , and a wiring 16 connected to the wiring 15 . The gate area of the gate 12 is indicated by G_Area, and the gate capacitance of the gate 12 is indicated by G_Cap. The areas of the wirings 13, 14, 15 , and 16 are indicated by MG 1 _Area, MG 2 _Area, M 1 _Area, and M 2 _Area, respectively, and a parasitic capacitance between the wirings 13 and 15 is indicated by M 1 _Cap. An antenna ratio R 1 calculated from the areas is given by an equation R 1 ={(MG 1 _Area+MG 2 _Area)+α(M 1 _Area+M 2 _Area)}/G_Area. α is a parameter determined by a function of the G_Cap and the M 1 _Cap. Layout of the wirings is performed so that a relation R 1 <L 1 (which is a specified value that causes damage to a gate oxide film).
1. A method of designing a wiring layout for a semiconductor integrated device using a designing apparatus, said method comprising:
insulating a diffusion layer from an element comprising an electrode;
connecting a first wiring to said electrode; and
providing an (n+1)th wiring parallel to and adjacent to a nth wiring, where n is an integer greater than or equal to one,
wherein said first to (n+1)th wirings are arranged such that an area ratio of a sum of an area of said first wiring plus a summation of areas of wirings from a second wiring to said (n+1)th wiring to an electrode area of said electrode is less than or equal to a predetermined value that gives charge-up damage to an insulating film of said electrode, said summation of the areas of the wirings from said second wiring to said (n+1)th wiring being given as a summation of the areas of the wirings from said second wiring to said (n+1)th wiring each multiplied by a predetermined coefficient a k , where k is an integer ranging from one to n.
2. The method according to claim 1 , further comprising:
obtaining circuit data necessary for the layout of said semiconductor integrated device;
performing the layout of said semiconductor integrated device based on the circuit data;
extracting said electrode and said first to (n+1)th wirings from the circuit data;
obtaining respective areas of said first to (n+1)th wirings; and
obtaining the area ratio from the respective areas and the electrode area; and
changing the layout of at least one of said first to (n+1)th wirings when the area ratio is larger than the predetermined value.
3. The method according to claim 1 , wherein said area of said first wiring, the areas of wirings from the second wiring to said (n+1)th wiring, and said electrode area comprise at least one of a surface area and a side area.
4. The method according to claim 1 , wherein the predetermined coefficient a k is determined from an electrode capacitance of said electrode and a plurality of wiring capacitances between the nth wiring and the (n+1)th wiring.
5. The method according to claim 1 , wherein at least one of said first to (n+1)th wirings is wired across two or more wiring layers.
6. The method according to claim 1 , wherein the second to (n+1)th wirings comprise j wires (where j is an integer greater than or equal to one).
7. A method of manufacturing a semiconductor integrated device by a manufacturing apparatus, said method comprising:
insulating a diffusion layer from an element comprising an electrode;
connecting a first wiring to said electrode; and
providing an (n+1)th wiring parallel to and adjacent to a nth wiring, where n is an integer greater than or equal to one,
wherein said first to (n+1)th wirings are arranged such that an area ratio of a sum of an area of said first wiring plus a summation of areas of wirings from a second wiring to said (n+1)th wiring to an electrode area of said electrode is less than an antenna ratio determined from a manufacturing condition of said manufacturing apparatus, said summation of the areas of the wirings from said second wiring to said (n+1)th wiring being given as a summation of the areas of the wirings from said second wiring to said (n+1)th wiring each multiplied by a predetermined coefficient a k , where k is an integer ranging from one to n.
8. The method according to claim 7 , further comprising:
obtaining layout data of said semiconductor integrated device;
extracting said electrode and said first to (n+1)th wirings from the layout data;
obtaining respective areas of said first to (n+1)th wirings;
obtaining the area ratio from the respective areas and the electrode area;
comparing the area ratio with the antenna ratio;
adjusting the manufacturing condition of said manufacturing apparatus when the area ratio is larger than the antenna ratio; and
manufacturing said semiconductor integrated device by said manufacturing apparatus according to the manufacturing condition.
9. The method according to claim 7 , wherein said area of said first wiring, the areas of wirings from the second wiring to said (n+1)th wiring, and said electrode area comprise at least one of a surface area and a side area.
10. The method according to claim 7 , wherein the predetermined coefficient a k is determined from an electrode capacitance of said electrode and a plurality of wiring capacitances between the nth wiring and the (n+1)th wiring.
11. The method according to claim 7 , wherein at least one of said first to (n+1)th wirings is wired across two or more wiring layers.
12. The method according to claim 7 , wherein the second to (n+1)th wirings comprise j wires (where j is an integer greater than or equal to one).
13. A semiconductor integrated circuit device comprising:
an element including an electrode insulated from a diffusion layer;
a first wiring connected to said electrode; and
an (n+1)th wiring parallel to and adjacent to an nth wiring, where n is an integer greater than or equal to one,
wherein said first to (n+1)th wirings are arranged such that an area ratio of a sum of an area of said first wiring plus a summation of areas of wirings from a second wiring to said (n+1)th wiring to an electrode area of said electrode becomes less than or equal to a predetermined value that gives charge-up damage to an insulating film of said electrode, said summation of the areas of the wirings from said second wiring to said (n+1)th wiring being given as a summation of the areas of the wirings from said second wiring to said (n+1)th wiring each multiplied by a predetermined coefficient a k , where k is an integer ranging from one to n.
14. The semiconductor integrated circuit device according to claim 13 , wherein said area of said first wiring, the areas of wirings from the second wiring to said (n+1)th wiring, and said electrode area comprise at least one of a surface area and a side area.
15. The semiconductor integrated circuit device according to claim 13 , wherein the predetermined coefficient a k is determined from an electrode capacitance of said electrode and a plurality of wiring capacitances between the nth wiring and the (n+1)th wiring.
16. The semiconductor integrated circuit device according to claim 13 , wherein at least one of said first to (n+1)th wirings is arranged across two or more wiring layers.
17. The semiconductor integrated circuit device according to claim 13 , wherein the second to (n+1)th wirings comprise j wires (where j is an integer greater than or equal to one).