Vacuum processing apparatus and substrate transfer method
View Patent ↗An etching processing apparatus 1 has a transfer chamber 2 , a plurality of processing chambers 3 and 4 , and a plurality of cassette chambers 7 and 8 . Inside the transfer chamber 2 , a transfer mechanism 14 is provided. A control device 17 pauses the operation of the vacuum pump 16 after closing an opening/closing valve 15 of a vacuum evacuating mechanism, which vacuum evacuates the transfer chamber 2 in which the transfer mechanism 14 is provided, when the operation of the transfer mechanism 14 is paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.
1. A substrate transfer method of transferring a substrate by a transfer mechanism inside a transfer chamber configured to have a vacuum atmosphere by a vacuum pump connected thereto with an opening/closing valve interposed therebetween, the substrate transfer method comprising:
closing the opening/closing valve and subsequently pausing operation of the vacuum pump after operation of the transfer mechanism is paused and a certain length of time delay has passed when the operation of the transfer mechanism is paused for a predetermined time or longer, thereby preventing dust inside the transfer chamber from being raised accompanying the movement of the transfer mechanism.
2. The substrate transfer method as set forth in claim 1
wherein the predetermined time is a time in which an amount of power to be reduced during a pause time of the vacuum pump is larger than an amount of extra power needed when restarting the vacuum pump.
3. The substrate transfer method as set forth in claim 1 ,
wherein the operation of the vacuum pump is paused after the opening/closing valve is closed and a predetermined time passes.
4. The substrate transfer method as set forth in claim 1 ,
wherein a processing chamber is connected to the transfer chamber with an opening/closing mechanism interposed therebetween, the processing chamber being configured to generate a plasma by applying high-frequency power thereto; and
wherein the opening/closing valve is closed and the operation of the vacuum pump is paused when the high-frequency power is applied and the operation of the transfer mechanism is paused for a predetermined time or longer.
5. The substrate transfer method as set forth in claim 4 ,
wherein the processing chamber is an etching processing chamber which performs etching on a substrate.