Semiconductor device and method for forming the same
View Patent ↗A semiconductor device may include first, second, and third semiconductor layers. The first and third layers may have a first dopant type, and the second layer may have a second dopant type. A first region within the third semiconductor layer may have the second dopant type. A second region between the first region and the second semiconductor layer may have the first dopant type. A third region above the second region may have the first dopant type. A fourth semiconductor region adjacent to the third region may have a first concentration of the second dopant type. A source contact region may have a second concentration of the second dopant type adjacent to the third semiconductor region and adjacent to the fourth semiconductor region. The second concentration may be higher than the first concentration.
1. A method for constructing a semiconductor device comprising:
forming a buried layer in a semiconductor substrate having a first dopant type, the buried layer having a second dopant type;
forming an epitaxial semiconductor layer over the buried layer, the epitaxial semiconductor layer having the first dopant type;
forming a first semiconductor region in the epitaxial semiconductor layer, the first semiconductor region having the second dopant type, a second semiconductor region being defined in the epitaxial semiconductor layer between the first semiconductor region and the buried layer, the second semiconductor region having the first dopant type;
forming a third semiconductor region in the epitaxial semiconductor layer, the third semiconductor region having the first dopant type;
forming a gate electrode over at least a portion of the first semiconductor region and over at least a portion of the third semiconductor region;
forming a fourth semiconductor region in the epitaxial semiconductor layer adjacent to the third semiconductor region and adjacent to the gate electrode, the fourth semiconductor region having a first concentration of the second dopant type;
forming a source contact region in the epitaxial semiconductor layer adjacent to the third semiconductor region and adjacent to and on a side of the fourth semiconductor region opposing the gate electrode, the source contact region having a second concentration of the second dopant type, the second concentration being higher than the first concentration;
forming a drain contact region in the epitaxial semiconductor layer adjacent to the first semiconductor region, the drain contact region having the second dopant type; and
forming a body contact region in the epitaxial semiconductor layer adjacent to the third semiconductor substrate, the body contact region having the first dopant type.
2. The method of claim 1 , further comprising:
forming a fifth semiconductor region in the epitaxial semiconductor layer adjacent to the buried layer of the semiconductor substrate, the fifth semiconductor region having the second dopant type; and
forming an isolation contact region in the epitaxial semiconductor layer adjacent to the fifth semiconductor region, the isolation contact region having the second dopant type.
3. The method of claim 1 , wherein the second concentration is at least 100 times greater than the first concentration.
4. The method of claim 1 , further comprising forming a plurality of trench isolation regions in the epitaxial semiconductor layer, a first of the trench isolation regions being between the fifth semiconductor region and third semiconductor region, a second of the trench isolation regions being between the body contact region and the source contact region, and a third of the trench isolation regions being between the gate electrode and the drain contact region.
5. The method of claim 4 , further comprising doping the second semiconductor region with the second dopant type.
6. The method of claim 4 , wherein the first dopant type is P-type and the second dopant type is N-type.