Non-rectilinear routing in rectilinear mesh of a metallization layer of an integrated circuit

1. An integrated circuit comprising

a first substantially continuous metallization layer, the layer being substantially planar and including:

first components aligned within the layer at a first direction;

second components aligned within the layer at a second direction different from the first direction; and

intersection components between the first and second components wherein the first, second and intersection components are in electrical contact and lie within a single metallization layer,

wherein metal density of said substantially continuous metallization layer is at least 90 percent of the design rule limit for metal density of a metal layer of said integrated circuit.

2. The integrated circuit of claim 1 in which said first substantially continuous metallization layer is for distributing first power to elements of said integrated circuit.

3. The integrated circuit of claim 2 further comprising a second substantially continuous metallization layer.

4. The integrated circuit of claim 3 wherein said second substantially continuous metallization layer is for distributing a second power complementary to said first power.

5. The integrated circuit of claim 3 in which said substantially similar tiles are arrayed on a rectilinear grid.

6. The integrated circuit of claim 1 in which said first substantially continuous metallization layer comprises a plurality of substantially similar tiles.

7. An integrated circuit comprising:

a first metallization layer comprising at least 48 percent metal over the extent of the first metallization layer; and

wherein said first metallization layer comprises first and second portions electrically isolated from one another.

8. The integrated circuit of claim 7 wherein adjacent boundaries of said first and second portions are parallel.

9. The integrated circuit of claim 8 wherein said adjacent boundaries of said first and second portions are aligned nonparallel to an edge of said integrated circuit.

10. The integrated circuit of claim 7 further comprising a trace disposed between and electrically isolated from said first and second portions of said first substantially continuous metallization layer.

11. The integrated circuit of claim 7 comprising:

a second metallization layer comprising at least 60 percent metal over the extent of the second metallization layer; and

wherein said second metallization layer comprises a structure to electrically couple said first and second portions of said first metallization layer.

12. The integrated circuit of claim 11 further comprising:

a trace disposed between and electrically isolated from said first and second portions of said first metallization layer; and

wherein said structure spans a projection of said trace onto said second metallization layer.

13. The integrated circuit of claim 12 wherein said trace is nonparallel to an edge of said integrated circuit.

14. An integrated circuit comprising:

a first metallization layer comprising a plurality of traces oriented in a first direction;

a second metallization layer comprising a plurality of traces oriented in a direction perpendicular to said first direction;

a third metallization layer comprising at least 48 percent metal over the extent of the third metallization layer; and

a signal path comprising a plurality of traces on said first, second and third metallization layers; and

wherein said plurality of traces on said third metallization layer comprises a trace that is nonparallel to said first and second directions.

15. The integrated circuit of claim 14 wherein said first and second directions are substantially parallel to an edge of said integrated circuit.

16. The integrated circuit of claim 14 wherein said plurality of traces on said third metallization layer comprises a plurality of turns of less than 90 degrees.