Method of manufacturing semiconductor device and method of manufacturing bonding sheet

1. A method of manufacturing a semiconductor device, comprising:

preparing a bonding sheet having one or more holes that penetrate the bonding sheet from a first surface to an opposite second surface thereof;

preparing a semiconductor wafer having a first main surface and a second main surface, a semiconductor element formed in the first main surface;

affixing the bonding sheet to the second main surface of the semiconductor wafer; and

evacuating gas present between the bonding sheet and the semiconductor wafer via the holes.

2. The method of manufacturing a semiconductor device according to claim 1 , further comprising:

wrapping the bonding sheet and the semiconductor wafer with a material having air permeability and flexibility; and

evacuating the gas present between the bonding sheet and the semiconductor wafer while the bonding sheet and the semiconductor wafer are sheathed with the material.

3. The method of manufacturing a semiconductor device according to claim 1 , further comprising preparing a contact table for receiving the semiconductor wafer, with a first set of holes and a second set of holes, the first set of holes being aligned with the holes that penetrate the bonding sheet, and the second set of holes not being aligned with the holes that penetrate the bonding sheet.

4. A method of manufacturing a semiconductor device, comprising:

preparing a bonding sheet having one or more holes that penetrate the bonding sheet from a first surface to an opposite second surface thereof, and a semiconductor wafer having a semiconductor element;

affixing the bonding sheet to a predetermined surface of the semiconductor wafer;

evacuating gas present between the bonding sheet and the semiconductor wafer via the holes; and

softening the bonding sheet by heating the bonding sheet while evacuating the gas present between the bonding sheet and the semiconductor wafer via the one or more holes,

wherein the bonding sheet has a thermal plasticity.

5. A method of manufacturing a semiconductor device, comprising:

preparing a bonding sheet having one or more holes that penetrate the bonding sheet from a first surface to an opposite second surface thereof, and a semiconductor wafer having a semiconductor element;

affixing the bonding sheet to a predetermined surface of the semiconductor wafer;

evacuating gas present between the bonding sheet and the semiconductor wafer via the holes; and

softening the bonding sheet affixed to the semiconductor wafer by means of heating,

wherein the bonding sheet has thermal plasticity.